Part Details for IPB65R660CFDATMA1 by Infineon Technologies AG
Results Overview of IPB65R660CFDATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IPB65R660CFDATMA1 Information
IPB65R660CFDATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB65R660CFDATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 10307 |
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RFQ | ||
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DISTI #
SP000861698
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EBV Elektronik | Trans MOSFET NCH 700V 6A 3Pin2Tab TO263 (Alt: SP000861698) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB65R660CFDATMA1
IPB65R660CFDATMA1 CAD Models
IPB65R660CFDATMA1 Part Data Attributes
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IPB65R660CFDATMA1
Infineon Technologies AG
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Datasheet
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IPB65R660CFDATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.66 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB65R660CFDATMA1
This table gives cross-reference parts and alternative options found for IPB65R660CFDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R660CFDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPD65R660CFDAATMA1 | Infineon Technologies AG | $0.9895 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3/2 | IPB65R660CFDATMA1 vs IPD65R660CFDAATMA1 |
| IPD65R660CFDATMA1 | Infineon Technologies AG | $0.9940 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | IPB65R660CFDATMA1 vs IPD65R660CFDATMA1 |
| IPB65R660CFDAATMA1 | Infineon Technologies AG | $1.1065 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3/2 | IPB65R660CFDATMA1 vs IPB65R660CFDAATMA1 |
| IPD65R660CFDATMA2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IPB65R660CFDATMA1 vs IPD65R660CFDATMA2 |
| IPD65R660CFDA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2 | IPB65R660CFDATMA1 vs IPD65R660CFDA |
| 6N60L-TMS-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor | IPB65R660CFDATMA1 vs 6N60L-TMS-T |
| IPB65R660CFDA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2 | IPB65R660CFDATMA1 vs IPB65R660CFDA |
| IPB65R660CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPB65R660CFDATMA1 vs IPB65R660CFD |
| IPB65R660CFDAXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2 | IPB65R660CFDATMA1 vs IPB65R660CFDAXT |
IPB65R660CFDATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB65R660CFDATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
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The recommended gate resistor value for IPB65R660CFDATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
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Yes, IPB65R660CFDATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuitry is designed to handle the parallel configuration.
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The maximum allowable voltage transient for IPB65R660CFDATMA1 is ±5% of the DC bus voltage, with a maximum duration of 10 μs.