Datasheets
IDP40E65D2 by: Infineon Technologies AG

Rectifier Diode,

Part Details for IDP40E65D2 by Infineon Technologies AG

Results Overview of IDP40E65D2 by Infineon Technologies AG

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IDP40E65D2 Information

IDP40E65D2 by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for IDP40E65D2

Part # Distributor Description Stock Price Buy
DISTI # 726-IDP40E65D2
Mouser Electronics Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching RoHS: Compliant 243
  • 1 $2.1300
  • 10 $1.5400
  • 100 $1.2200
  • 500 $1.0200
  • 1,000 $0.8810
  • 2,500 $0.8370
  • 5,000 $0.8100
$0.8100 / $2.1300 Buy Now

Part Details for IDP40E65D2

IDP40E65D2 CAD Models

IDP40E65D2 Part Data Attributes

IDP40E65D2 Infineon Technologies AG
Buy Now Datasheet
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IDP40E65D2 Infineon Technologies AG Rectifier Diode,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, 2 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Infineon
Additional Feature PD-CASE
Application FAST SOFT RECOVERY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 2.2 V
JEDEC-95 Code TO-220AC
JESD-30 Code R-PSFM-T2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 250 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Output Current-Max 80 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 200 W
Rep Pk Reverse Voltage-Max 650 V
Reverse Current-Max 40 µA
Reverse Recovery Time-Max 0.075 µs
Reverse Test Voltage 650 V
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

IDP40E65D2 Related Parts

IDP40E65D2 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.

  • Infineon recommends using a gate driver with a high current capability (e.g., 2A to 5A) and a low propagation delay (e.g., <10ns) to ensure proper switching of the IDP40E65D2. The gate driver should also be compatible with the device's gate-source voltage rating.

  • According to Infineon's application note AN2019-01, the maximum allowed voltage overshoot during turn-on and turn-off is 10% of the maximum drain-source voltage (VDS) rating, which is 650V for the IDP40E65D2.

  • Implementing overvoltage protection (OVP) and undervoltage protection (UVP) circuits can help ensure safe operation. Infineon recommends using a voltage monitor IC or a dedicated OVP/UVP IC to detect and respond to voltage anomalies.

  • For high-power applications, Infineon recommends using a heat sink with a thermal interface material (TIM) to improve heat transfer. The heat sink should be designed to provide a low thermal resistance (Rth) and should be attached to the device using a suitable mounting method (e.g., screw or clip).

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