Datasheets
IDP30E65D2XKSA1 by: Infineon Technologies AG

Rectifier Diode, 1 Phase, 1 Element, 60A, 650V V(RRM), Silicon, TO-220AC,

Part Details for IDP30E65D2XKSA1 by Infineon Technologies AG

Results Overview of IDP30E65D2XKSA1 by Infineon Technologies AG

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IDP30E65D2XKSA1 Information

IDP30E65D2XKSA1 by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for IDP30E65D2XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 51AH7937
Newark Emitter Control Diode, 650V, 60A, To-220 Rohs Compliant: Yes |Infineon IDP30E65D2XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 121
  • 1 $1.9600
  • 10 $1.1400
  • 100 $1.0700
  • 500 $0.8620
  • 1,000 $0.7460
  • 2,500 $0.7450
  • 5,000 $0.7120
$0.7120 / $1.9600 Buy Now
DISTI # 448-IDP30E65D2XKSA1-ND
DigiKey DIODE STD 650V 60A PGTO22021 Min Qty: 1 Lead time: 19 Weeks Container: Tube 419
In Stock
  • 1 $1.9200
  • 50 $1.0850
  • 100 $1.0137
  • 500 $0.8105
  • 1,000 $0.7451
  • 2,000 $0.6939
  • 5,000 $0.6603
$0.6603 / $1.9200 Buy Now
DISTI # IDP30E65D2XKSA1
Avnet Americas Diode Switching 650V 60A 2-Pin TO-220 Tube - Rail/Tube (Alt: IDP30E65D2XKSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 500 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.6021
  • 2,000 $0.5670
  • 3,000 $0.5641
  • 5,000 $0.5612
  • 10,000 $0.5582
$0.5582 / $0.6021 Buy Now
DISTI # 726-IDP30E65D2XKSA1
Mouser Electronics Small Signal Switching Diodes IGBT PRODUCTS RoHS: Compliant 524
  • 1 $1.9100
  • 10 $1.0900
  • 100 $1.0200
  • 500 $0.8100
  • 1,000 $0.6940
  • 2,500 $0.6930
  • 5,000 $0.6600
$0.6600 / $1.9100 Buy Now
DISTI # SP001170104
EBV Elektronik Diode Switching 650V 60A 2Pin TO220 Tube (Alt: SP001170104) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IDP30E65D2XKSA1

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IDP30E65D2XKSA1 Part Data Attributes

IDP30E65D2XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IDP30E65D2XKSA1 Infineon Technologies AG Rectifier Diode, 1 Phase, 1 Element, 60A, 650V V(RRM), Silicon, TO-220AC,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 22 Weeks
Samacsys Manufacturer Infineon
Additional Feature PD-CASE
Application FAST SOFT RECOVERY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 2.2 V
JEDEC-95 Code TO-220AC
JESD-30 Code R-PSFM-T2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 180 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Output Current-Max 60 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation-Max 143 W
Rep Pk Reverse Voltage-Max 650 V
Reverse Current-Max 40 µA
Reverse Recovery Time-Max 0.07 µs
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Alternate Parts for IDP30E65D2XKSA1

This table gives cross-reference parts and alternative options found for IDP30E65D2XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IDP30E65D2XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IDP30E65D2 Infineon Technologies AG Check for Price Rectifier Diode, 1 Phase, 1 Element, 60A, 650V V(RRM), Silicon, TO-220AC, IDP30E65D2XKSA1 vs IDP30E65D2

IDP30E65D2XKSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the IDP30E65D2XKSA1. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.

  • When selecting a gate driver for the IDP30E65D2XKSA1, consider factors such as the driver's output current capability, voltage rating, and propagation delay. Infineon recommends using a gate driver with a high current capability (> 2A) and a low propagation delay (< 50ns) to ensure reliable switching. The 1EDC and 2EDC families from Infineon are suitable options.

  • The internal temperature sensor in the IDP30E65D2XKSA1 provides a digital output that can be used to monitor the device's temperature. This feature allows for thermal monitoring and protection, but it also requires additional system design considerations, such as signal conditioning, filtering, and thermal management. Ensure that your system design takes into account the temperature sensor's output and its impact on overall system performance.

  • The IDP30E65D2XKSA1 has built-in overcurrent protection, but it's essential to implement additional fault detection and protection mechanisms in your system design. This can be achieved using external components, such as current sense resistors, op-amps, and comparators, or by using a dedicated fault detection IC. Infineon provides application notes and reference designs that can guide your implementation.

  • The IDP30E65D2XKSA1 is a high-power device that can generate electromagnetic interference (EMI). To ensure electromagnetic compatibility (EMC), it's crucial to follow proper PCB layout and design guidelines, use shielding and filtering components, and implement EMI reduction techniques, such as spread spectrum clocking and slew rate control. Infineon provides guidelines and application notes to help with EMI and EMC considerations.

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