Part Details for IDB30E120XT by Infineon Technologies AG
Results Overview of IDB30E120XT by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IDB30E120XT Information
IDB30E120XT by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for IDB30E120XT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 70 |
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RFQ | ||
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Quest Components | 56 |
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$1.4170 / $2.5764 | Buy Now |
Part Details for IDB30E120XT
IDB30E120XT CAD Models
IDB30E120XT Part Data Attributes
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IDB30E120XT
Infineon Technologies AG
Buy Now
Datasheet
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IDB30E120XT
Infineon Technologies AG
Rectifier Diode, 1 Phase, 1 Element, 50A, 1200V V(RRM), Silicon, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Factory Lead Time | 19 Weeks | |
| Application | FAST RECOVERY | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Non-rep Pk Forward Current-Max | 102 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 50 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Power Dissipation-Max | 138 W | |
| Rep Pk Reverse Voltage-Max | 1200 V | |
| Reverse Recovery Time-Max | 0.243 µs | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
IDB30E120XT Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2019-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching. Consult Infineon's gate driver selection guide for more information.
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The IDB30E120XT has an internal overcurrent protection (OCP) feature that trips at 30A. However, it's recommended to implement an external OCP circuit to ensure reliable protection. The datasheet provides guidelines for designing an external OCP circuit.
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Infineon recommends using a heat sink with a thermal resistance of ≤ 0.5 K/W and ensuring good thermal contact between the module and heat sink. The application note AN2019-03 provides detailed guidelines for thermal design and heat sink selection.
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Infineon provides guidelines for soldering and assembly in their application note AN2019-03, including recommended soldering temperatures, times, and techniques to ensure reliable connections and minimize thermal stress.