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0.1 GHz to 3 GHz,1 dB LSB, 5-Bit, GaAs Digital Attenuator
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
HMC470ALP3E by Analog Devices Inc is an RF/Microwave Attenuator.
RF/Microwave Attenuators are under the broader part category of RF and Microwave Components.
RF and Microwave Engineering focuses on the design and operation of devices that transmit or receive radio waves. The main distinction between RF and microwave engineering is their wavelength, which influences how energy is transmitted and used in various applications. Read more about RF and Microwave Components on our RF and Microwave part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50AK1726
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Newark | Digital Attenuator, 3Ghz, Lfcsp-Ep, Frequency Max:3Ghz, Frequency Min:100Mhz, Attenuation Step Size:1Db, Attenuation - Typical:31Db, Insertion Loss:1.7Db, No. Of Bits:5Bit, Supply Voltage Min:3V, Supply Voltage Max:5V Rohs Compliant: Yes |Analog Devices HMC470ALP3E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 57 |
|
$9.6300 / $14.0000 | Buy Now |
DISTI #
505-HMC470ALP3E-ND
|
DigiKey | RF ATTENUATOR 31DB 16VFQFN Min Qty: 1 Lead time: 20 Weeks Container: Strip |
1114 In Stock |
|
$9.4457 / $14.0000 | Buy Now |
DISTI #
584-HMC470ALP3E
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Mouser Electronics | Attenuators 0.1 GHz to 3 GHz,1 dB LSB, 5-Bit, GaAs Digital Attenuator RoHS: Compliant | 842 |
|
$9.6300 / $14.0000 | Buy Now |
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Analog Devices Inc | Digital Attenuator Package Multiple: 1 | 223 |
|
$9.4457 / $14.0000 | Buy Now |
DISTI #
HMC470ALP3E
|
TME | IC: digital attenuator, 3÷5VDC, Ch: 1, LFCSP16, telecommunication Min Qty: 1 | 0 |
|
$10.8000 / $13.6000 | RFQ |
DISTI #
HMC470ALP3E
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Richardson RFPD | ATTENUATOR - DIGITALLY CONTROLLED RoHS: Compliant Min Qty: 1 | 62 |
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$9.0600 / $9.7200 | Buy Now |
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LCSC | 50 31dB 500mW 100MHz3GHz VFQFN-16-EP(3x3) RF Attenuators ROHS | 23 |
|
$7.2331 / $10.4498 | Buy Now |
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Win Source Electronics | 1 dB LSB GaAs MMIC 5-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 3 GHz | RF ATTENUATOR 31DB 16VFQFN | 6991 |
|
$6.5000 / $9.7500 | Buy Now |
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HMC470ALP3E
Analog Devices Inc
Buy Now
Datasheet
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Compare Parts:
HMC470ALP3E
Analog Devices Inc
0.1 GHz to 3 GHz,1 dB LSB, 5-Bit, GaAs Digital Attenuator
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ANALOG DEVICES INC | |
Package Description | MO-220VEED-4, 16 PIN | |
Pin Count | 16 | |
Manufacturer Package Code | HCP-16-1 | |
Reach Compliance Code | compliant | |
Date Of Intro | 2016-07-20 | |
Samacsys Manufacturer | Analog Devices | |
Additional Feature | CMOS COMPATIBLE | |
Attenuation-Nom | 31 dB | |
Characteristic Impedance | 50 Ω | |
Construction | COMPONENT | |
Input Power-Max (CW) | 25 dBm | |
Insertion Loss-Max | 2 dB | |
JESD-609 Code | e3 | |
Mounting Feature | SURFACE MOUNT | |
Number of Terminals | 16 | |
Operating Frequency-Max | 3000 MHz | |
Operating Frequency-Min | 100 MHz | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Equivalence Code | LCC16,.12SQ,20 | |
Power Supplies | 3/5 V | |
RF/Microwave Device Type | VARIABLE ATTENUATOR | |
Surface Mount | YES | |
Technology | GAAS | |
Terminal Finish | Matte Tin (Sn) |
This table gives cross-reference parts and alternative options found for HMC470ALP3E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HMC470ALP3E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
HMC470LP3ERTR | Analog Devices Inc | Check for Price | IC,ATTENUATOR,GAAS,LLCC,16PIN,PLASTIC | HMC470ALP3E vs HMC470LP3ERTR |
A good PCB layout should ensure minimal signal path lengths, minimal thermal resistance, and adequate heat sinking. A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A thermal via array can also be used to improve heat dissipation.
The input and output matching networks should be optimized for maximum gain and efficiency using a combination of simulation tools and empirical methods. The device's S-parameters can be used to design the matching networks, and the optimal matching network topology and component values can be determined through simulation and experimentation.
The recommended biasing and tuning procedures involve setting the gate voltage to the recommended value, adjusting the drain voltage to achieve the desired output power, and tuning the input and output matching networks for maximum gain and efficiency. The device's biasing and tuning procedures should be performed in a specific order to avoid damage to the device.
The device's SOA should be carefully monitored to prevent damage. The device's voltage, current, and power dissipation should be kept within the recommended limits, and the device's temperature should be monitored to prevent overheating. The device's SOA can be monitored using on-chip sensors and external monitoring circuits.
The device is sensitive to electrostatic discharge (ESD) and requires proper handling and protection procedures to prevent damage. The device should be handled in an ESD-controlled environment, and ESD protection devices such as diodes and resistors should be used to protect the device from ESD events.