Part Details for HAT2172H-EL-E by Renesas Electronics Corporation
Results Overview of HAT2172H-EL-E by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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HAT2172H-EL-E Information
HAT2172H-EL-E by Renesas Electronics Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for HAT2172H-EL-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1146 |
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DISTI #
HAT2172H-EL-E
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Avnet Asia | Trans MOSFET N-CH 40V 30A 5-Pin(4+Tab) LFPAK T/R (Alt: HAT2172H-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 28 Weeks, 0 Days | 0 |
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RFQ |
Part Details for HAT2172H-EL-E
HAT2172H-EL-E CAD Models
HAT2172H-EL-E Part Data Attributes
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HAT2172H-EL-E
Renesas Electronics Corporation
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Datasheet
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HAT2172H-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 40V 30A 7.5Mohm Lfpak, LFPAK, /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | LFPAK | |
| Package Description | SC-100, LFPAK-5 | |
| Pin Count | 5 | |
| Manufacturer Package Code | PTZZ0005DA | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0092 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |