Part Details for FZ1200R33KF2CNOSA1 by Infineon Technologies AG
Results Overview of FZ1200R33KF2CNOSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
FZ1200R33KF2CNOSA1 Information
FZ1200R33KF2CNOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FZ1200R33KF2CNOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86105736
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Verical | Trans IGBT Module N-CH 3300V 2KA 14500W 9-Pin Tray RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2001 | Americas - 90 |
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$2,547.8125 / $2,895.2375 | Buy Now |
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Rochester Electronics | FZ1200R33KF2C - 3300 V, 1200 A single switch IGBT module RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 90 |
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$2,038.2500 / $2,316.1900 | Buy Now |
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DISTI #
SP000100603
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EBV Elektronik | TRACTION (Alt: SP000100603) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FZ1200R33KF2CNOSA1
FZ1200R33KF2CNOSA1 CAD Models
FZ1200R33KF2CNOSA1 Part Data Attributes
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FZ1200R33KF2CNOSA1
Infineon Technologies AG
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Datasheet
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FZ1200R33KF2CNOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-9 | |
| Pin Count | 9 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | 3A228.C | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 2000 A | |
| Collector-Emitter Voltage-Max | 3300 V | |
| Configuration | PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X9 | |
| Number of Elements | 3 | |
| Number of Terminals | 9 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 14500 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1900 ns | |
| Turn-on Time-Nom (ton) | 480 ns | |
| VCEsat-Max | 4.25 V |
FZ1200R33KF2CNOSA1 Frequently Asked Questions (FAQ)
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Infineon provides a reference design and layout guidelines in their application notes and design guides. It's essential to follow these guidelines to ensure proper heat dissipation, minimize parasitic inductances, and optimize signal integrity.
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When selecting a gate driver, consider the FZ1200R33KF2CNOSA1's gate charge, voltage rating, and current requirements. Ensure the gate driver can provide the necessary voltage and current to fully enhance or deplete the MOSFET. Infineon's gate driver selection guide can be a valuable resource.
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Monitor the FZ1200R33KF2CNOSA1's temperature, voltage, and current to ensure safe operation. Implement overcurrent, overvoltage, and overtemperature protection mechanisms using external circuitry or a dedicated IC. Infineon's protection ICs, such as the BSC091N04LS, can be used for this purpose.
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Follow Infineon's guidelines for PCB layout, component placement, and shielding. Implement proper filtering, decoupling, and grounding techniques to minimize EMI. Ensure the design meets relevant EMC standards and regulations.
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Infineon provides reliability data and guidelines in their documentation. Implement a reliability-centered design by considering factors such as thermal management, voltage derating, and component stress analysis. Follow industry standards and best practices for reliability engineering.