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Part Details for FQU1N80TU by onsemi
Results Overview of FQU1N80TU by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQU1N80TU Information
FQU1N80TU by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQU1N80TU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQU1N80TU
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Avnet Americas | Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU1N80TU) RoHS: Compliant Min Qty: 1713 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 3772 Partner Stock |
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$0.3435 / $0.3561 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 1A, 800V, 20ohm, N-Channel, MOSFET, TO-251 RoHS: Compliant Status: Obsolete Min Qty: 1 | 539 |
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$0.3093 / $0.4989 | Buy Now |
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DISTI #
FQU1N80TU
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TME | Transistor: N-MOSFET, unipolar, 800V, 630mA, Idm: 4A, 45W, IPAK Min Qty: 1 | 0 |
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$0.4600 / $1.0010 | RFQ |
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DISTI #
FQU1N80TU
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Avnet Silica | Trans MOSFET NCH 800V 1A 3Pin3Tab IPAK Rail (Alt: FQU1N80TU) RoHS: Compliant Min Qty: 5040 Package Multiple: 70 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQU1N80TU
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EBV Elektronik | Trans MOSFET NCH 800V 1A 3Pin3Tab IPAK Rail (Alt: FQU1N80TU) RoHS: Compliant Min Qty: 70 Package Multiple: 70 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 3772 |
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RFQ |
Part Details for FQU1N80TU
FQU1N80TU CAD Models
FQU1N80TU Part Data Attributes
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FQU1N80TU
onsemi
Buy Now
Datasheet
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Compare Parts:
FQU1N80TU
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, IPAK, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | IPAK-3 / DPAK-3 STRAIGHT LEAD | |
| Package Description | IPAK-3 | |
| Manufacturer Package Code | 369AR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 20 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQU1N80TU
This table gives cross-reference parts and alternative options found for FQU1N80TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU1N80TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQU1N80TU | Rochester Electronics LLC | Check for Price | 1A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | FQU1N80TU vs FQU1N80TU |
FQU1N80TU Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of FQU1N80TU is 150°C, but it's recommended to keep it below 125°C for reliable operation.
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To ensure proper biasing, make sure to provide a stable voltage supply, keep the gate-source voltage within the recommended range (typically -2V to 2V), and use a suitable gate resistor to prevent oscillations.
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For optimal thermal management, use a PCB with a thick copper layer, keep the component away from heat sources, and use thermal vias to dissipate heat. A good layout should also minimize parasitic inductance and capacitance.
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While FQU1N80TU can be used in switching applications, its performance may degrade at high frequencies (>100kHz) due to increased switching losses. Consider using a more suitable device or optimizing the design to minimize losses.
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To protect the FQU1N80TU from ESD, use proper handling and storage procedures, implement ESD protection circuits in the design, and ensure that the device is properly grounded during assembly and testing.