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Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQD7N20LTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH8755
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Newark | Mosfet, N-Ch, 200V, 5.5A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:5.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD7N20LTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 142 |
|
$0.2700 | Buy Now |
DISTI #
82C4083
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Newark | N-Ch/Ll/200V/5.5A/0.75Ohm@vgs=10V/0.78Ohm@vgs=5V Rohs Compliant: Yes |Onsemi FQD7N20LTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2870 / $0.3830 | Buy Now |
DISTI #
FQD7N20LTMCT-ND
|
DigiKey | MOSFET N-CH 200V 5.5A DPAK Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1000 In Stock |
|
$0.2781 / $0.9800 | Buy Now |
DISTI #
FQD7N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD7N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days Container: Reel | 0 |
|
$0.2624 / $0.2713 | Buy Now |
DISTI #
512-FQD7N20LTM
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Mouser Electronics | MOSFETs N-Channel QFET MOSFET 200V, 5.5A, 750mO RoHS: Compliant | 2604 |
|
$0.2780 / $0.9600 | Buy Now |
DISTI #
E02:0323_03239733
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Arrow Electronics | Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks Date Code: 2448 | Europe - 2500 |
|
$0.4258 / $0.4929 | Buy Now |
|
Onlinecomponents.com | N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK RoHS: Compliant | 0 |
|
$0.2651 / $0.2890 | Buy Now |
DISTI #
87617834
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Verical | Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2448 | Americas - 2500 |
|
$0.4185 / $0.4893 | Buy Now |
DISTI #
FQD7N20LTM
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TME | Transistor: N-MOSFET, unipolar, 200V, 3.48A, Idm: 22A, 45W, DPAK Min Qty: 1 | 0 |
|
$0.3320 / $0.7570 | RFQ |
DISTI #
FQD7N20LTM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
|
$0.2800 | Buy Now |
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FQD7N20LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD7N20LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 11 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 73 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.78 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum junction temperature for the FQD7N20LTM is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the device is operated within the recommended current limits.
For optimal thermal performance, use a PCB with a thermal relief pattern and a heat sink with a thermal interface material. Ensure good thermal conductivity between the device and the heat sink. Also, follow the recommended PCB layout guidelines for power devices to minimize parasitic inductance and capacitance.
Use a voltage regulator or a voltage clamp to limit the voltage across the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, consider using a fuse or a PTC resettable fuse for added protection.
The FQD7N20LTM has built-in ESD protection, but it's still important to follow proper ESD handling precautions when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe. Avoid touching the device's pins or leads, and use ESD-safe packaging and storage materials.