Datasheets
FQD7N20LTM by:

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FQD7N20LTM by onsemi

Results Overview of FQD7N20LTM by onsemi

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FQD7N20LTM Information

FQD7N20LTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQD7N20LTM

Part # Distributor Description Stock Price Buy
DISTI # 54AH8755
Newark Mosfet, N-Ch, 200V, 5.5A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:5.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD7N20LTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 142
  • 1 $0.2700
  • 10 $0.2700
  • 25 $0.2700
  • 50 $0.2700
  • 100 $0.2700
  • 250 $0.2700
$0.2700 Buy Now
DISTI # 82C4083
Newark N-Ch/Ll/200V/5.5A/0.75Ohm@vgs=10V/0.78Ohm@vgs=5V Rohs Compliant: Yes |Onsemi FQD7N20LTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3830
  • 3,000 $0.3740
  • 6,000 $0.3450
  • 12,000 $0.3230
  • 18,000 $0.3010
  • 30,000 $0.2870
$0.2870 / $0.3830 Buy Now
DISTI # FQD7N20LTMCT-ND
DigiKey MOSFET N-CH 200V 5.5A DPAK Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1000
In Stock
  • 1 $0.9800
  • 10 $0.6580
  • 100 $0.4559
  • 500 $0.3817
  • 1,000 $0.3468
  • 2,500 $0.3019
  • 5,000 $0.2887
  • 7,500 $0.2834
  • 12,500 $0.2781
$0.2781 / $0.9800 Buy Now
DISTI # FQD7N20LTM
Avnet Americas Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD7N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2713
  • 5,000 $0.2681
  • 10,000 $0.2651
  • 15,000 $0.2637
  • 20,000 $0.2624
$0.2624 / $0.2713 Buy Now
DISTI # 512-FQD7N20LTM
Mouser Electronics MOSFETs N-Channel QFET MOSFET 200V, 5.5A, 750mO RoHS: Compliant 2604
  • 1 $0.9600
  • 10 $0.6450
  • 100 $0.4470
  • 500 $0.3750
  • 1,000 $0.3410
  • 2,500 $0.2880
  • 5,000 $0.2830
  • 10,000 $0.2780
$0.2780 / $0.9600 Buy Now
DISTI # E02:0323_03239733
Arrow Electronics Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks Date Code: 2448 Europe - 2500
  • 2,500 $0.4929
  • 5,000 $0.4658
  • 10,000 $0.4611
  • 15,000 $0.4563
  • 20,000 $0.4407
  • 50,000 $0.4258
$0.4258 / $0.4929 Buy Now
Onlinecomponents.com N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK RoHS: Compliant 0
  • 2,500 $0.2890
  • 5,000 $0.2816
  • 7,500 $0.2774
  • 10,000 $0.2733
  • 15,000 $0.2692
  • 25,000 $0.2651
$0.2651 / $0.2890 Buy Now
DISTI # 87617834
Verical Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2448 Americas - 2500
  • 2,500 $0.4893
  • 5,000 $0.4645
  • 10,000 $0.4632
  • 15,000 $0.4493
  • 20,000 $0.4344
  • 50,000 $0.4185
$0.4185 / $0.4893 Buy Now
DISTI # FQD7N20LTM
TME Transistor: N-MOSFET, unipolar, 200V, 3.48A, Idm: 22A, 45W, DPAK Min Qty: 1 0
  • 1 $0.7570
  • 10 $0.6280
  • 100 $0.4350
  • 500 $0.3440
  • 1,000 $0.3320
$0.3320 / $0.7570 RFQ
DISTI # FQD7N20LTM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.2800
$0.2800 Buy Now
DISTI # FQD7N20LTM
Avnet Asia Trans MOSFET N-CH 200V 5.5A 3-Pin(2+Tab) DPAK T/R (Alt: FQD7N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days 0
  • 2,500 $0.2775
  • 5,000 $0.2739
  • 7,500 $0.2704
  • 12,500 $0.2670
  • 25,000 $0.2604
  • 62,500 $0.2541
  • 125,000 $0.2481
$0.2481 / $0.2775 Buy Now
DISTI # FQD7N20LTM
Avnet Silica Trans MOSFET NCH 200V 55A 3Pin2Tab DPAK TR (Alt: FQD7N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FQD7N20LTM
EBV Elektronik Trans MOSFET NCH 200V 55A 3Pin2Tab DPAK TR (Alt: FQD7N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FQD7N20LTM

FQD7N20LTM CAD Models

FQD7N20LTM Part Data Attributes

FQD7N20LTM onsemi
Buy Now Datasheet
Compare Parts:
FQD7N20LTM onsemi Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 73 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.78 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FQD7N20LTM Related Parts

FQD7N20LTM Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the FQD7N20LTM is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.

  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the device is operated within the recommended current limits.

  • For optimal thermal performance, use a PCB with a thermal relief pattern and a heat sink with a thermal interface material. Ensure good thermal conductivity between the device and the heat sink. Also, follow the recommended PCB layout guidelines for power devices to minimize parasitic inductance and capacitance.

  • Use a voltage regulator or a voltage clamp to limit the voltage across the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, consider using a fuse or a PTC resettable fuse for added protection.

  • The FQD7N20LTM has built-in ESD protection, but it's still important to follow proper ESD handling precautions when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe. Avoid touching the device's pins or leads, and use ESD-safe packaging and storage materials.

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