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Part Details for FDS6982AS by onsemi
Results Overview of FDS6982AS by onsemi
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDS6982AS Information
FDS6982AS by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDS6982AS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
64K0982
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Newark | N Channel Mosfet, 30V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:6.3A, Continuous Drain Current Id P Channel:-, No. Of Pins:8Pinsrohs Compliant: Yes |Onsemi FDS6982AS RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
67R2080
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:6.3A, Continuous Drain Current Id P Channel:-, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS6982AS RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
61M6321
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Newark | Dual Mosfet, Dual N Channel, 6.3 A, 30 V, 0.011 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDS6982AS RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
FDS6982AS
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Avnet Asia | Transistor MOSFET Array Dual N-CH 30V 6.3A/8.6A 8-Pin SOIC T/R (Alt: FDS6982AS) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 | 2500 |
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RFQ | |
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DISTI #
FDS6982AS
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Avnet Silica | Transistor MOSFET Array Dual NCH 30V 63A86A 8Pin SOIC TR (Alt: FDS6982AS) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDS6982AS
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EBV Elektronik | Transistor MOSFET Array Dual NCH 30V 63A86A 8Pin SOIC TR (Alt: FDS6982AS) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 5000 |
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RFQ |
Part Details for FDS6982AS
FDS6982AS CAD Models
FDS6982AS Part Data Attributes
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FDS6982AS
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6982AS
onsemi
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™ 30V, SOIC-8, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.6 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 64 ns | |
| Turn-on Time-Max (ton) | 34 ns |
Alternate Parts for FDS6982AS
This table gives cross-reference parts and alternative options found for FDS6982AS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6982AS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDS6982AS | Rochester Electronics LLC | Check for Price | 8.6A, 30V, 0.0135ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | FDS6982AS vs FDS6982AS |
FDS6982AS Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
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Ensure the input voltage is within the recommended range (4.5V to 5.5V) and the output voltage is set correctly using the FB pin. Also, ensure the input and output capacitors are of suitable values and types.
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The maximum current rating for the FDS6982AS is 2A. However, it's recommended to derate the current to 1.5A for optimal reliability and thermal performance.
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Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions. You can also add a voltage clamp or a TVS diode to protect the device from voltage transients.
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Use a pi-filter or a common-mode choke to filter out high-frequency noise and EMI. Ensure the filter components are placed close to the device and the PCB layout is optimized for minimal radiation.