Part Details for FDP42AN15A0 by onsemi
Results Overview of FDP42AN15A0 by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDP42AN15A0 Information
FDP42AN15A0 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDP42AN15A0
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28H9702
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Newark | N Channel Mosfet, 150V, 35A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:35A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FDP42AN15A0 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.1100 / $1.2100 | Buy Now |
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DISTI #
FDP42AN15A0FS-ND
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DigiKey | MOSFET N-CH 150V 5A/35A TO220-3 Min Qty: 1 Lead time: 11 Weeks Container: Tube |
1795 In Stock |
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$1.0301 / $2.9800 | Buy Now |
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DISTI #
FDP42AN15A0
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Avnet Americas | Power MOSFET, Automotive, N Channel, 150 V, 12 A, 0.042 ohm, TO-220AB, Through Hole - Rail/Tube (Alt: FDP42AN15A0) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days Container: Tube | 0 |
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$0.9695 / $1.0359 | Buy Now |
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DISTI #
512-FDP42AN15A0
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Mouser Electronics | MOSFETs 150V 35a .42 Ohms/VGS=1V RoHS: Compliant | 8787 |
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$1.0300 / $2.9600 | Buy Now |
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DISTI #
E02:0323_00842818
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Arrow Electronics | Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) TO-220 Tube Min Qty: 50 Package Multiple: 50 Lead time: 11 Weeks Date Code: 2505 | Europe - 800 |
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$2.8167 / $2.9601 | Buy Now |
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Onlinecomponents.com | TO-220AB, Single, N-ch, 150V, 42MOHM Ultrafet Trench Mosfet RoHS: Compliant | 0 |
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$0.9870 / $1.2300 | Buy Now |
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DISTI #
88037406
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Verical | Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) TO-220 Tube Min Qty: 50 Package Multiple: 50 Date Code: 2505 | Americas - 800 |
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$2.8087 / $2.9517 | Buy Now |
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DISTI #
FDP42AN15A0
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TME | Transistor: N-MOSFET, unipolar, 150V, 24A, 150W, TO220AB Min Qty: 1 | 64 |
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$1.3600 / $2.2000 | Buy Now |
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DISTI #
FDP42AN15A0
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
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$1.0300 | Buy Now |
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DISTI #
FDP42AN15A0
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Avnet Asia | Power MOSFET, Automotive, N Channel, 150 V, 12 A, 0.042 ohm, TO-220AB, Through Hole (Alt: FDP42AN15A0) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days | 0 |
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$0.9695 / $1.0843 | Buy Now |
Part Details for FDP42AN15A0
FDP42AN15A0 CAD Models
FDP42AN15A0 Part Data Attributes
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FDP42AN15A0
onsemi
Buy Now
Datasheet
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Compare Parts:
FDP42AN15A0
onsemi
N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ, TO-220-3, 800-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Package Description | TO-220AB, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 11 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDP42AN15A0
This table gives cross-reference parts and alternative options found for FDP42AN15A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP42AN15A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7451TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 | FDP42AN15A0 vs IRF7451TRPBF |
FDP42AN15A0 Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
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The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a bias resistor can be used to set the gate-source voltage.
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The device is sensitive to electrostatic discharge (ESD) and can be damaged by excessive voltage or current. Handle the device by the body, avoid touching the pins, and use an ESD wrist strap or mat to prevent damage.
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The maximum power dissipation of the device can be determined by calculating the maximum current and voltage ratings. The device's thermal resistance, junction temperature, and ambient temperature should also be considered.
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The recommended soldering conditions for the device are a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method that prevents thermal shock to the device.