Part Details for FDMS7560S by onsemi
Results Overview of FDMS7560S by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDMS7560S Information
FDMS7560S by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMS7560S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDMS7560S
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EBV Elektronik | Trans MOSFET NCH 25V 30A 8Pin Power 56 TR (Alt: FDMS7560S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for FDMS7560S
FDMS7560S CAD Models
FDMS7560S Part Data Attributes
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FDMS7560S
onsemi
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Datasheet
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FDMS7560S
onsemi
N-Channel PowerTrench® SyncFET™ 25V, 49A, 1.45mΩ, PQFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | PQFN-8 | |
| Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
| Manufacturer Package Code | 483AE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.00145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDMS7560S Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
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The maximum allowed voltage on the VIN pin is 36V, but it's recommended to keep it below 30V for reliable operation and to prevent damage to the internal voltage regulator.
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To configure the device for low-power mode, set the EN pin low and ensure the VIN pin is below 5.5V. This will reduce the quiescent current and power consumption.
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A 10uF to 22uF ceramic capacitor is recommended for the VIN pin to filter out noise and ensure stable operation.