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Part Details for FDB52N20TM by onsemi
Results Overview of FDB52N20TM by onsemi
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDB52N20TM Information
FDB52N20TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB52N20TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81AC8682
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Newark | Uf 200V 49Mohm D2Pak Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 10400 |
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$1.0600 / $1.4200 | Buy Now |
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DISTI #
31Y1340
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Newark | Mosfet Transistor, N Channel, 52 A, 200 V, 0.041 Ohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4698 |
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$2.2100 / $3.1100 | Buy Now |
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DISTI #
86K1324
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Newark | N Channel Mosfet, 200V, 52A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:52A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1400 / $1.5000 | Buy Now |
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DISTI #
FDB52N20TMCT-ND
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DigiKey | MOSFET N-CH 200V 52A D2PAK Min Qty: 1 Lead time: 59 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
625 In Stock |
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$1.0551 / $2.4500 | Buy Now |
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DISTI #
FDB52N20TM
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Avnet Americas | Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 59 Weeks, 0 Days Container: Reel | 10400 |
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$0.9931 / $1.0294 | Buy Now |
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DISTI #
512-FDB52N20TM
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Mouser Electronics | MOSFETs 200V N-Ch MOSFET RoHS: Compliant | 4314 |
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$1.0500 / $2.3000 | Buy Now |
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DISTI #
V36:1790_06298525
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Arrow Electronics | Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 59 Weeks Date Code: 2508 | Americas - 9600 |
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$1.0477 | Buy Now |
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DISTI #
E02:0323_00840129
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Arrow Electronics | Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 59 Weeks Date Code: 2511 | Europe - 1600 |
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$1.0808 | Buy Now |
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DISTI #
V72:2272_06298525
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Arrow Electronics | Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 59 Weeks Date Code: 2416 Container: Cut Strips | Americas - 9 |
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$1.1329 | Buy Now |
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Onlinecomponents.com | In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM RoHS: Compliant |
3200 In Stock |
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$0.9370 / $0.9850 | Buy Now |
Part Details for FDB52N20TM
FDB52N20TM CAD Models
FDB52N20TM Part Data Attributes
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FDB52N20TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB52N20TM
onsemi
Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | D2PAK-3/2 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 59 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 2520 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 357 W | |
| Pulsed Drain Current-Max (IDM) | 208 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB52N20TM
This table gives cross-reference parts and alternative options found for FDB52N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB52N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SML20S56 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 56A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 | FDB52N20TM vs SML20S56 |
FDB52N20TM Frequently Asked Questions (FAQ)
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The maximum SOA for the FDB52N20TM is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
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To ensure proper thermal management, it's crucial to provide adequate heat sinking, such as using a heat sink or thermal interface material, and to follow the recommended PCB layout and thermal design guidelines outlined in the datasheet and application notes.
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The recommended gate drive circuits for the FDB52N20TM typically involve using a gate driver IC, such as the FAN5350, along with a suitable gate resistor and capacitor. Consult the datasheet and application notes for specific guidance on gate drive circuit design.
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To handle ESD protection for the FDB52N20TM, it's essential to follow proper handling and storage procedures, use ESD-protective packaging, and incorporate ESD protection devices, such as TVS diodes, into the circuit design.
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The reliability and lifespan expectations for the FDB52N20TM are typically dependent on factors such as operating conditions, temperature, and usage patterns. Consult the datasheet and reliability reports for specific information on the device's expected lifespan and reliability.