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Part Details for FDB3652 by onsemi
Results Overview of FDB3652 by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDB3652 Information
FDB3652 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB3652
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47T5011
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Newark | Mosfet Transistor, N Channel, 61 A, 100 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDB3652 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 440 |
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$1.7800 / $3.3200 | Buy Now |
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DISTI #
51M1011
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Newark | Mosfet Transistor, N Channel, 61 A, 100 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDB3652 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9460 / $1.2500 | Buy Now |
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DISTI #
96AC0012
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Newark | Fet 100V 16.0 Mohm D2Pak Rohs Compliant: Yes |Onsemi FDB3652 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8890 / $1.2000 | Buy Now |
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DISTI #
28H9662
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Newark | N Channel Mosfet, 100V, 61A, To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:61A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDB3652 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.3600 | Buy Now |
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DISTI #
FDB3652CT-ND
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DigiKey | MOSFET N-CH 100V 9A/61A D2PAK Min Qty: 1 Lead time: 9 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
543 In Stock |
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$0.8882 / $2.8500 | Buy Now |
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DISTI #
FDB3652
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Avnet Americas | Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB3652) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.8360 / $0.8666 | Buy Now |
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DISTI #
512-FDB3652
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Mouser Electronics | MOSFETs N-Channel PowerTrench RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
E02:0323_00844483
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Arrow Electronics | Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks Date Code: 2423 | Europe - 12800 |
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$0.8909 / $0.8970 | Buy Now |
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Onlinecomponents.com | N-Channel 100 V 16 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3 RoHS: Compliant | 0 |
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$0.8700 / $1.0200 | Buy Now |
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DISTI #
82018538
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Verical | Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2423 | Americas - 12800 |
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$0.9036 / $0.9098 | Buy Now |
Part Details for FDB3652
FDB3652 CAD Models
FDB3652 Part Data Attributes
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FDB3652
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB3652
onsemi
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | TO-263AB, 3 PIN | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 182 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB3652
This table gives cross-reference parts and alternative options found for FDB3652. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB3652, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDB3652 | Fairchild Semiconductor Corporation | Check for Price | N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL | FDB3652 vs FDB3652 |
FDB3652 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range.
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Monitor the device's current (IOUT), voltage (VOUT), and temperature (TJ). Implement overcurrent protection (OCP), undervoltage protection (UVP), and overtemperature protection (OTP) to prevent damage.
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Consult the application note and reference design provided by onsemi. Perform thorough simulations and testing to optimize the device's performance for your specific use case.
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Follow standard ESD handling procedures, including the use of ESD-safe workstations, wrist straps, and packaging materials. Ensure all personnel handling the device are properly trained and equipped.