Part Details for FDB3652-F085 by onsemi
Results Overview of FDB3652-F085 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDB3652-F085 Information
FDB3652-F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB3652-F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85983405
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Verical | Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 Min Qty: 210 Package Multiple: 1 Date Code: 2201 | Americas - 3223 |
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$1.5000 / $1.7875 | Buy Now |
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DISTI #
85982978
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Verical | Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 Min Qty: 210 Package Multiple: 1 Date Code: 2101 | Americas - 384 |
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$1.5000 / $1.7875 | Buy Now |
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Rochester Electronics | N-Channel PowerTrench MOSFET, 100V, 61A, 16m RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3607 |
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$1.2000 / $1.5000 | Buy Now |
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DISTI #
FDB3652-F085
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Avnet Silica | (Alt: FDB3652-F085) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDB3652-F085
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EBV Elektronik | (Alt: FDB3652-F085) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2332 |
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RFQ |
Part Details for FDB3652-F085
FDB3652-F085 CAD Models
FDB3652-F085 Part Data Attributes
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FDB3652-F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB3652-F085
onsemi
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-263 2L (D2PAK) | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 182 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB3652-F085
This table gives cross-reference parts and alternative options found for FDB3652-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB3652-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDB3652 | Rochester Electronics LLC | Check for Price | 9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | FDB3652-F085 vs FDB3652 |
| FDB3652 | Fairchild Semiconductor Corporation | Check for Price | N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL | FDB3652-F085 vs FDB3652 |
| FQB70N08TM | Rochester Electronics LLC | Check for Price | 70A, 80V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | FDB3652-F085 vs FQB70N08TM |
FDB3652-F085 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the FDB3652-F085 is a standard SOT-23 package with a 1.5mm x 1.5mm pad size, and a thermal pad for heat dissipation.
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To ensure the FDB3652-F085 operates within its SOA, ensure the drain-source voltage (Vds) does not exceed 650V, the drain current (Id) does not exceed 3.5A, and the junction temperature (Tj) does not exceed 150°C.
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The maximum allowed power dissipation for the FDB3652-F085 is 2.5W, assuming a junction temperature (Tj) of 25°C and a thermal resistance (RθJA) of 125°C/W.
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To prevent electrostatic discharge (ESD) damage, handle the FDB3652-F085 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or leads.
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Yes, the FDB3652-F085 is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, ensure the device is properly driven and the PCB layout is optimized for high-frequency operation.