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Part Details for FDB2614 by onsemi
Results Overview of FDB2614 by onsemi
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
FDB2614 Information
FDB2614 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDB2614
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6192
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Newark | Mosfet Transistor, N Channel, 62 A, 200 V, 22.9 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FDB2614 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 685 |
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$4.2100 / $6.0900 | Buy Now |
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DISTI #
30M0734
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Newark | N Channel Mosfet, 200V, 62A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:62A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4Vrohs Compliant: Yes |Onsemi FDB2614 RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.2000 / $2.7700 | Buy Now |
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DISTI #
FDB2614CT-ND
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DigiKey | MOSFET N-CH 200V 62A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1108 In Stock |
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$2.1168 / $4.9700 | Buy Now |
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DISTI #
FDB2614
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Avnet Americas | Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB2614) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$1.9922 / $2.0651 | Buy Now |
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DISTI #
512-FDB2614
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Mouser Electronics | MOSFETs 200V N-Channel PowerTrench MOSFET RoHS: Compliant | 2673 |
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$2.1100 / $4.8700 | Buy Now |
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DISTI #
E02:0323_00045773
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Arrow Electronics | Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks | Europe - 800 |
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$2.1304 | Buy Now |
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Onlinecomponents.com | N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ RoHS: Compliant | 0 |
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$2.1000 / $4.4000 | Buy Now |
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DISTI #
14980934
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Verical | Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 | Americas - 800 |
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$2.1470 | Buy Now |
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DISTI #
85987864
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Verical | Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R Min Qty: 143 Package Multiple: 1 Date Code: 2101 | Americas - 800 |
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$2.2250 / $2.6375 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 62A, 200V, 0.027ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Active Min Qty: 1 | 800 |
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$1.7800 / $2.2200 | Buy Now |
Part Details for FDB2614
FDB2614 CAD Models
FDB2614 Part Data Attributes
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FDB2614
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB2614
onsemi
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | ROHS COMPLIANT, 3 PIN | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 145 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 62 A | |
| Drain-source On Resistance-Max | 0.027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
FDB2614 Frequently Asked Questions (FAQ)
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The FDB2614 can operate from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
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The FDB2614 requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
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The FDB2614 can handle a maximum continuous current of 1A, and a peak current of 2A for a short duration (less than 100ms).
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Use proper ESD handling procedures, such as grounding yourself and using an anti-static wrist strap or mat. Also, ensure the FDB2614 is stored in an anti-static bag or container when not in use.
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Yes, the FDB2614 is suitable for high-frequency applications up to 1GHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.