Part Details for FDB2532_F085 by onsemi
Results Overview of FDB2532_F085 by onsemi
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
FDB2532_F085 Information
FDB2532_F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDB2532_F085
FDB2532_F085 CAD Models
FDB2532_F085 Part Data Attributes
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FDB2532_F085
onsemi
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Datasheet
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FDB2532_F085
onsemi
150V, 79A, 14mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Manufacturer Package Code | TO263A02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDB2532_F085 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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The device requires a stable input voltage (VIN) and a proper bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 5.5V) and VBIAS is set to 2.5V ± 0.1V.
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The maximum power dissipation for the FDB2532-F085 is 1.4W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range (–40°C to 125°C) to prevent overheating.
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Check the input voltage, output voltage, and bias voltage for any anomalies. Verify the device is properly biased and the output capacitor is within the recommended range (10uF to 22uF). Also, ensure the PCB layout is correct and there are no noise or interference issues.
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A 10uF to 22uF ceramic or tantalum capacitor with a low ESR (Equivalent Series Resistance) is recommended for optimal performance. The capacitor should be placed as close to the device as possible to minimize noise and ensure stable output voltage regulation.