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Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FCD7N60TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
34M6099
|
Newark | Mosfet, N Channel, 600V, 7A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FCD7N60TM RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1465 |
|
$2.0600 / $2.7100 | Buy Now |
DISTI #
20M1156
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Newark | Sf1 600V 600Mohm E Dpak/Reel Rohs Compliant: Yes |Onsemi FCD7N60TM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.0300 / $1.3700 | Buy Now |
DISTI #
FCD7N60TMCT-ND
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DigiKey | MOSFET N-CH 600V 7A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6758 In Stock |
|
$0.9461 / $2.7800 | Buy Now |
DISTI #
FCD7N60TM
|
Avnet Americas | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FCD7N60TM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 3500 |
|
RFQ | |
DISTI #
FCD7N60TM
|
Avnet Americas | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FCD7N60TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.8905 / $0.9231 | Buy Now |
DISTI #
512-FCD7N60TM
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Mouser Electronics | MOSFETs N-CH/600V/7A SuperFET RoHS: Compliant | 16397 |
|
$0.9460 / $2.7300 | Buy Now |
DISTI #
E02:0323_00840459
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Arrow Electronics | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2413 | Europe - 2500 |
|
$2.3478 / $2.4499 | Buy Now |
|
Onlinecomponents.com | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK RoHS: Compliant | 0 |
|
$0.9070 / $1.0370 | Buy Now |
DISTI #
87553736
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Verical | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2413 | Americas - 2500 |
|
$2.3507 / $2.4529 | Buy Now |
DISTI #
FCD7N60TM
|
IBS Electronics | N-CHANNEL POWER MOSFET SUPERFET®, EASY DRIVE 600 V 7 A 600 MΩ, DPAK Min Qty: 2500 Package Multiple: 1 | 0 |
|
$1.0595 | Buy Now |
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FCD7N60TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FCD7N60TM
onsemi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the FCD7N60TM is -55°C to 150°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be within the recommended operating range.
The recommended gate resistor value for the FCD7N60TM is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
To protect the FCD7N60TM from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sensors.
The maximum allowable power dissipation for the FCD7N60TM is 125W, but this can be affected by factors such as ambient temperature, thermal resistance, and PCB design.