Part Details for FCD7N60TM-WS by onsemi
Results Overview of FCD7N60TM-WS by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FCD7N60TM-WS Information
FCD7N60TM-WS by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FCD7N60TM-WS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC0828
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Newark | Sf1 600V 600Mohm E Dpak/Reel Rohs Compliant: Yes |Onsemi FCD7N60TM-WS RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9570 / $1.2800 | Buy Now |
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DISTI #
FCD7N60TM-WSCT-ND
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DigiKey | MOSFET N-CH 600V 7A DPAK Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1308 In Stock |
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$0.9173 / $2.6700 | Buy Now |
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DISTI #
FCD7N60TM-WS
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Avnet Americas | - Tape and Reel (Alt: FCD7N60TM-WS) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 2500 Factory Stock |
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$0.8481 / $0.8791 | Buy Now |
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DISTI #
512-FCD7N60TM-WS
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Mouser Electronics | MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab RoHS: Compliant | 3804 |
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$0.9170 / $2.6200 | Buy Now |
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DISTI #
V79:2366_26625650
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Arrow Electronics | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 2122 | Americas - 48 |
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$0.8410 | Buy Now |
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Onlinecomponents.com | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK RoHS: Compliant | 0 |
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$0.8950 / $1.8740 | Buy Now |
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DISTI #
87651906
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Verical | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 | Americas - 2500 |
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$0.9068 | Buy Now |
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DISTI #
61569518
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Verical | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2122 | Americas - 48 |
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$0.8410 | Buy Now |
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DISTI #
FCD7N60TM-WS
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.9000 | Buy Now |
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DISTI #
FCD7N60TM-WS
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Avnet Asia | Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R (Alt: FCD7N60TM-WS) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days | 0 |
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$0.8481 / $0.9486 | Buy Now |
Part Details for FCD7N60TM-WS
FCD7N60TM-WS CAD Models
FCD7N60TM-WS Part Data Attributes
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FCD7N60TM-WS
onsemi
Buy Now
Datasheet
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Compare Parts:
FCD7N60TM-WS
onsemi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK, TO-252 3L (DPAK), 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-252 3L (DPAK) | |
| Package Description | ROHS COMPLIANT, PLASTIC, DPAK-3/2 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FCD7N60TM-WS Frequently Asked Questions (FAQ)
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The recommended PCB footprint for FCD7N60TM-WS is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C, and follow proper thermal management and cooling techniques.
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The maximum allowed voltage spike for FCD7N60TM-WS is 650V, which is the maximum repetitive peak voltage (VDRM) rating. However, it's recommended to limit voltage spikes to 600V or less to ensure device reliability.
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While FCD7N60TM-WS can be used in switching applications, it's not recommended for high-frequency switching (>100kHz) due to its relatively high switching losses. For high-frequency switching, consider using a MOSFET with lower switching losses, such as the FQP50N06L.
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To protect FCD7N60TM-WS from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider adding ESD protection devices, such as TVS diodes, in the circuit design.