Part Details for DD200S33K2C by Infineon Technologies AG
Results Overview of DD200S33K2C by Infineon Technologies AG
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DD200S33K2C Information
DD200S33K2C by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part Details for DD200S33K2C
DD200S33K2C CAD Models
DD200S33K2C Part Data Attributes
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DD200S33K2C
Infineon Technologies AG
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Datasheet
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DD200S33K2C
Infineon Technologies AG
Rectifier Diode, 1 Phase, 2 Element, 200A, 3300V V(RRM), Silicon, MODULE-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Samacsys Manufacturer | Infineon | |
| Application | GENERAL PURPOSE | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 3.5 V | |
| JESD-30 Code | R-XUFM-X3 | |
| Number of Elements | 2 | |
| Number of Phases | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Output Current-Max | 200 A | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 3300 V | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
DD200S33K2C Frequently Asked Questions (FAQ)
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Infineon provides a dedicated application note (AN2019-01) that outlines the recommended PCB layout and thermal management guidelines for the DD200S33K2C. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
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Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the DD200S33K2C's gate-source voltage (VGS). The driver should also have a low propagation delay and a high common-mode transient immunity (CMTI) to ensure reliable operation.
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The maximum allowed junction temperature (Tj) for the DD200S33K2C is 150°C. However, it's recommended to operate the device at a lower temperature (typically below 125°C) to ensure reliability and longevity.
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To minimize the impact of parasitic inductance and capacitance, it's essential to use a low-inductance PCB layout, keep the gate and source connections as short as possible, and use a low-ESR capacitor for decoupling. Additionally, consider using a gate driver with a built-in negative voltage spike protection to mitigate the effects of parasitic inductance.
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To accurately characterize the DD200S33K2C, Infineon recommends using a high-bandwidth oscilloscope (e.g., 1 GHz or higher), a high-current probe, and a precision voltage source. Additionally, consider using a thermal imaging camera to monitor the device's temperature during operation.