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Part Details for CSD19532Q5BT by Texas Instruments
Results Overview of CSD19532Q5BT by Texas Instruments
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CSD19532Q5BT Information
CSD19532Q5BT by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CSD19532Q5BT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-44471-1-ND
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DigiKey | MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
3313 In Stock |
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$1.2675 / $3.1800 | Buy Now |
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DISTI #
595-CSD19532Q5BT
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Mouser Electronics | MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19532Q5B RoHS: Compliant | 4517 |
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$1.3200 / $3.1200 | Buy Now |
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Rochester Electronics | CSD19532Q5B 100V, N ch NexFET MOSFET, single SON5x6, 4.9mOhm RoHS: Not Compliant Status: Active Min Qty: 1 | 37 |
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$1.0600 / $1.3300 | Buy Now |
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DISTI #
CSD19532Q5BT
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TME | Transistor: N-MOSFET, unipolar, 100V, 100A, 195W, VSON-CLIP8, 5x6mm Min Qty: 1 | 0 |
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$1.8800 / $2.6300 | RFQ |
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DISTI #
CSD19532Q5BT
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 180 |
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$1.0300 / $2.8700 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 100A VSON / Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R | 140800 |
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$0.9344 / $1.4010 | Buy Now |
Part Details for CSD19532Q5BT
CSD19532Q5BT CAD Models
CSD19532Q5BT Part Data Attributes
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CSD19532Q5BT
Texas Instruments
Buy Now
Datasheet
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Compare Parts:
CSD19532Q5BT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | VSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 274 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 18 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 195 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD19532Q5BT
This table gives cross-reference parts and alternative options found for CSD19532Q5BT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19532Q5BT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD19532Q5B | Texas Instruments | $1.8446 | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm 8-VSON-CLIP -55 to 150 | CSD19532Q5BT vs CSD19532Q5B |
CSD19532Q5BT Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. Also, ensure the output voltage (VOUT) is within the recommended range (0.8V to 3.3V).
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A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for input decoupling. Place the capacitor as close to the VIN pin as possible.
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The thermal shutdown feature is activated when the junction temperature exceeds 150°C. Ensure proper heat sinking and thermal design to prevent overheating. If thermal shutdown occurs, the device will automatically recover when the junction temperature drops below 130°C.
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A 10uF to 22uF ceramic capacitor (X5R or X7R dielectric) is recommended for output filtering. Place the capacitor as close to the VOUT pin as possible.