Part Details for BUZ73LHKSA1 by Infineon Technologies AG
Results Overview of BUZ73LHKSA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BUZ73LHKSA1 Information
BUZ73LHKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUZ73LHKSA1
BUZ73LHKSA1 CAD Models
BUZ73LHKSA1 Part Data Attributes
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BUZ73LHKSA1
Infineon Technologies AG
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Datasheet
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BUZ73LHKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ73LHKSA1
This table gives cross-reference parts and alternative options found for BUZ73LHKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ73LHKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD7NS20-1 | STMicroelectronics | Check for Price | 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | BUZ73LHKSA1 vs STD7NS20-1 |
| STD7NB20-1 | STMicroelectronics | Check for Price | 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 | BUZ73LHKSA1 vs STD7NB20-1 |
| Q67040-S4112-A2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3 | BUZ73LHKSA1 vs Q67040-S4112-A2 |
| IRFU230B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | BUZ73LHKSA1 vs IRFU230B |
| IRFU230BTLTU_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3 | BUZ73LHKSA1 vs IRFU230BTLTU_FP001 |
| SPD07N20GXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | BUZ73LHKSA1 vs SPD07N20GXT |
| IRFU230BTU_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3 | BUZ73LHKSA1 vs IRFU230BTU_FP001 |
| BUZ73HXKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | BUZ73LHKSA1 vs BUZ73HXKSA1 |
| SPD07N20GBTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | BUZ73LHKSA1 vs SPD07N20GBTMA1 |