Part Details for BUZ72A by Siemens
Results Overview of BUZ72A by Siemens
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ72A Information
BUZ72A by Siemens is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ72A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,9A I(D),TO-220AB | 90 |
|
$2.7170 / $6.2700 | Buy Now |
|
|
Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,9A I(D),TO-220AB | 15 |
|
$4.5980 / $6.2700 | Buy Now |
Part Details for BUZ72A
BUZ72A CAD Models
BUZ72A Part Data Attributes
|
|
BUZ72A
Siemens
Buy Now
Datasheet
|
Compare Parts:
BUZ72A
Siemens
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Part Package Code | SFM | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 59 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 105 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 130 ns | |
| Turn-on Time-Max (ton) | 85 ns |
Alternate Parts for BUZ72A
This table gives cross-reference parts and alternative options found for BUZ72A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ72A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ72A | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ72A vs BUZ72A |
BUZ72A Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the BUZ72A is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at higher temperatures, so it's recommended to operate it within a temperature range of -40°C to 100°C for optimal performance.
-
To ensure safe operation of the BUZ72A during overvoltage conditions, it's crucial to implement overvoltage protection circuits, such as voltage clamping devices or surge arresters, to limit the voltage across the thyristor. Additionally, ensure that the device is operated within its specified voltage ratings and follow proper PCB design and layout practices to minimize voltage transients.
-
The recommended gate current for the BUZ72A is typically in the range of 10-50 mA, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate current requirements, as excessive gate current can lead to device damage or malfunction.
-
While the BUZ72A is suitable for high-frequency switching applications, its performance may degrade at frequencies above 1 kHz due to increased switching losses and reduced turn-on/turn-off times. To ensure reliable operation, it's recommended to consult the datasheet and application notes for specific guidance on high-frequency operation, and consider using specialized high-frequency thyristors or IGBTs if necessary.
-
To minimize EMI when using the BUZ72A, ensure proper PCB design and layout practices, such as using ground planes, shielding, and decoupling capacitors. Additionally, consider using EMI filters or common-mode chokes to reduce electromagnetic radiation, and follow relevant EMI standards and regulations for your specific application.