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Part Details for BSZ065N06LS5ATMA1 by Infineon Technologies AG
Results Overview of BSZ065N06LS5ATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BSZ065N06LS5ATMA1 Information
BSZ065N06LS5ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ065N06LS5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8783
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Newark | Mosfet, N-Ch, 60V, 40A, 150Deg C, 46W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSZ065N06LS5ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 57 |
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$0.5080 / $1.3400 | Buy Now |
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DISTI #
448-BSZ065N06LS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 40A TSDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4067 In Stock |
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$0.4160 / $1.5400 | Buy Now |
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DISTI #
39AH8783
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Avnet Americas | DIFFERENTIATED MOSFETS - Product that comes on tape, but is not reeled (Alt: 39AH8783) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 57 Partner Stock |
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$0.3620 / $0.8920 | Buy Now |
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DISTI #
BSZ065N06LS5ATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ065N06LS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.3835 / $0.3915 | Buy Now |
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DISTI #
726-BSZ065N06LS5ATMA
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Mouser Electronics | MOSFETs MV POWER MOS RoHS: Compliant | 21854 |
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$0.4970 / $1.5200 | Buy Now |
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Future Electronics | N-Channel 60 V 9.4 mOhm 46 W OptiMOS Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 5000Reel |
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$0.3850 | Buy Now |
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Future Electronics | N-Channel 60 V 9.4 mOhm 46 W OptiMOS Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.3850 | Buy Now |
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DISTI #
77264881
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Verical | Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R Min Qty: 61 Package Multiple: 1 Date Code: 2304 | Americas - 14750 |
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$0.4930 / $1.2300 | Buy Now |
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Rochester Electronics | 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 39743 |
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$0.4182 / $0.6745 | Buy Now |
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Future Electronics | N-Channel 60 V 9.4 mOhm 46 W OptiMOS Power Mosfet - TSDSON-8 Min Qty: 5000 Package Multiple: 5000 |
5000 null |
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$0.3850 | Buy Now |
Part Details for BSZ065N06LS5ATMA1
BSZ065N06LS5ATMA1 CAD Models
BSZ065N06LS5ATMA1 Part Data Attributes
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BSZ065N06LS5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ065N06LS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TSDSON-8 , 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks, 1 Day | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 38 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSZ065N06LS5ATMA1 Frequently Asked Questions (FAQ)
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The BSZ065N06LS5ATMA1 has an operating temperature range of -55°C to 175°C.
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To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
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To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the decoupling capacitors. Avoid using vias under the MOSFET, and use a solid ground plane.
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Use a voltage clamp or a zener diode to protect against overvoltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
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The recommended gate resistor value depends on the specific application, but a typical value is in the range of 10-100 ohms. A lower value can reduce switching losses, but may increase oscillations.