Datasheets
BSO150N03 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8

Part Details for BSO150N03 by Infineon Technologies AG

Results Overview of BSO150N03 by Infineon Technologies AG

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BSO150N03 Information

BSO150N03 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSO150N03

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,7.6A I(D),SO 842
  • 1 $0.6693
  • 135 $0.3123
  • 641 $0.2789
$0.2789 / $0.6693 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 7.6A, 30V, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 4065
  • 100 $0.4065
  • 500 $0.3658
  • 1,000 $0.3374
  • 10,000 $0.3008
  • 100,000 $0.2520
$0.2520 / $0.4065 Buy Now
DISTI # SMC-BSO150N03
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1644
RFQ

Part Details for BSO150N03

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BSO150N03 Part Data Attributes

BSO150N03 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSO150N03 Infineon Technologies AG Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOIC
Package Description GREEN, PLASTIC PACKAGE-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.6 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSO150N03

This table gives cross-reference parts and alternative options found for BSO150N03. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO150N03, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N5909 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, BSO150N03 vs 2N5909
SDF509 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, BSO150N03 vs SDF509
SI4330DY-T1-E3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 BSO150N03 vs SI4330DY-T1-E3
SI3441DVS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 BSO150N03 vs SI3441DVS62Z
NDS8926/L99Z Texas Instruments Check for Price 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET BSO150N03 vs NDS8926/L99Z
SDF502 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, BSO150N03 vs SDF502
2N5904 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, BSO150N03 vs 2N5904
2N3957 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, BSO150N03 vs 2N3957
SI6926ADQ-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal BSO150N03 vs SI6926ADQ-T1-GE3
SDF504 Solitron Devices Inc Check for Price Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, BSO150N03 vs SDF504

BSO150N03 Related Parts

BSO150N03 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the BSO150N03 is 150°C, as specified in the datasheet.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.

  • The maximum current rating of the BSO150N03 is 150A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.

  • To protect the BSO150N03 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

  • The recommended gate drive voltage for the BSO150N03 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.

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