Part Details for BSM200GD60DLCBOSA1 by Infineon Technologies AG
Results Overview of BSM200GD60DLCBOSA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BSM200GD60DLCBOSA1 Information
BSM200GD60DLCBOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BSM200GD60DLCBOSA1
BSM200GD60DLCBOSA1 CAD Models
BSM200GD60DLCBOSA1 Part Data Attributes
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BSM200GD60DLCBOSA1
Infineon Technologies AG
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Datasheet
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BSM200GD60DLCBOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, MODULE-39
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-19 | |
| Pin Count | 39 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 226 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X19 | |
| Number of Elements | 6 | |
| Number of Terminals | 19 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 326 ns | |
| Turn-on Time-Nom (ton) | 229 ns |
Alternate Parts for BSM200GD60DLCBOSA1
This table gives cross-reference parts and alternative options found for BSM200GD60DLCBOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GD60DLCBOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| CM200TU-12F | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel | BSM200GD60DLCBOSA1 vs CM200TU-12F |
| BSM200GD60DLC | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, MODULE-39 | BSM200GD60DLCBOSA1 vs BSM200GD60DLC |
| MWI200-06A8 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19 | BSM200GD60DLCBOSA1 vs MWI200-06A8 |
BSM200GD60DLCBOSA1 Frequently Asked Questions (FAQ)
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Infineon provides a dedicated application note (AN2019-01) that outlines the recommended PCB layout and thermal design guidelines for the BSM200GD60DLCBOSA1. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal management.
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The selection of a suitable gate driver depends on the specific application requirements, such as the switching frequency, voltage, and current. Infineon recommends using their EiceDRIVER™ gate driver family, which is specifically designed to work with their IGBT modules. The EiceDRIVER™ datasheet and application notes provide guidance on selecting the right gate driver for the BSM200GD60DLCBOSA1.
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Infineon provides a dedicated application note (AN2019-02) that outlines the recommended soldering and assembly procedures for the BSM200GD60DLCBOSA1. It's essential to follow these guidelines to ensure reliable connections and to prevent damage to the module during assembly.
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The BSM200GD60DLCBOSA1 has built-in protection features, such as overvoltage protection and short-circuit protection. However, additional protection measures, such as overvoltage protection devices (OVPDs) and current sensors, may be required depending on the specific application requirements. Infineon recommends consulting their application notes and design guides for more information on protecting the IGBT module.
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The BSM200GD60DLCBOSA1 requires a suitable thermal interface material (TIM) to ensure effective heat transfer between the module and the heat sink. Infineon recommends using a TIM with a thermal conductivity of at least 3 W/mK and a thickness of 0.1 mm to 0.5 mm. The TIM should be applied according to the manufacturer's instructions and the module's datasheet guidelines.