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Part Details for BSC600N25NS3GATMA1 by Infineon Technologies AG
Results Overview of BSC600N25NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (25 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC600N25NS3GATMA1 Information
BSC600N25NS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC600N25NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH9596
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Newark | Trench >=100V Rohs Compliant: Yes |Infineon BSC600N25NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel | 345000 |
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Buy Now | |
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DISTI #
79X1338
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Newark | Mosfet, N-Ch, 250V, 25A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC600N25NS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2326 |
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$0.5900 | Buy Now |
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DISTI #
86AK4483
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Newark | Mosfet, N-Ch, 250V, 25A, Tdson Rohs Compliant: Yes |Infineon BSC600N25NS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.6000 | Buy Now |
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DISTI #
BSC600N25NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 250V 25A TDSON-8-1 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4615 In Stock |
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$1.4844 / $3.6600 | Buy Now |
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DISTI #
BSC600N25NS3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 250 V, 25 A, 0.05 ohm, TDSON, Surface Mount - Tape and Reel (Alt: BSC600N25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks, 0 Days Container: Reel | 345000 |
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RFQ | |
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DISTI #
79X1338
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Avnet Americas | Power MOSFET, N Channel, 250 V, 25 A, 0.05 ohm, TDSON, Surface Mount - Product that comes on tape, but is not reeled (Alt: 79X1338) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Ammo Pack | 2326 Partner Stock |
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$2.0700 / $3.7000 | Buy Now |
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DISTI #
726-BSC600N25NS3GATM
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Mouser Electronics | MOSFETs N-Ch 250V 25A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
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$1.4800 / $3.5000 | Order Now |
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DISTI #
V36:1790_06378338
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Arrow Electronics | Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Date Code: 2336 | Americas - 45000 |
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$1.4230 | Buy Now |
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DISTI #
E02:0323_00822334
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Arrow Electronics | Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 16 Weeks Date Code: 2507 | Europe - 5000 |
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$1.4894 | Buy Now |
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DISTI #
E32:1076_00822334
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Arrow Electronics | Trans MOSFET N-CH 250V 25A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks | Europe - 2413 |
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$1.4752 / $3.4314 | Buy Now |
Part Details for BSC600N25NS3GATMA1
BSC600N25NS3GATMA1 CAD Models
BSC600N25NS3GATMA1 Part Data Attributes
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BSC600N25NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC600N25NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC600N25NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC600N25NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC600N25NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB600N25N3GATMA1 | Infineon Technologies AG | $1.9144 | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | BSC600N25NS3GATMA1 vs IPB600N25N3GATMA1 |
| BSC600N25NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC600N25NS3GATMA1 vs BSC600N25NS3G |
| IPB600N25N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | BSC600N25NS3GATMA1 vs IPB600N25N3G |
BSC600N25NS3GATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the BSC600N25NS3GATMA1 is 175°C, as specified in the datasheet.
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To ensure the safe operating area (SOA) of the BSC600N25NS3GATMA1, you should follow the guidelines outlined in the datasheet, including limiting the drain-source voltage, drain current, and power dissipation within the recommended specifications.
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The recommended gate drive voltage for the BSC600N25NS3GATMA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and requirements.
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To minimize the switching losses of the BSC600N25NS3GATMA1, you can use a gate driver with a high current capability, optimize the gate resistance, and ensure a low inductance layout. Additionally, using a snubber circuit or a gate-source resistor can help reduce switching losses.
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Yes, the BSC600N25NS3GATMA1 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, the maximum switching frequency depends on the specific application and requirements.