Part Details for BSC105N10LSFGATMA1 by Infineon Technologies AG
Results Overview of BSC105N10LSFGATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC105N10LSFGATMA1 Information
BSC105N10LSFGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC105N10LSFGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 11.4A, 100V, 0.0105ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 7410 |
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$1.5500 / $1.9400 | Buy Now |
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DISTI #
SP000388502
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EBV Elektronik | Trans MOSFET NCH 100V 114A 8Pin TDSON TR (Alt: SP000388502) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for BSC105N10LSFGATMA1
BSC105N10LSFGATMA1 CAD Models
BSC105N10LSFGATMA1 Part Data Attributes
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BSC105N10LSFGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC105N10LSFGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 377 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11.4 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC105N10LSFGATMA1
This table gives cross-reference parts and alternative options found for BSC105N10LSFGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC105N10LSFGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC100N10NSFG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC105N10LSFGATMA1 vs BSC100N10NSFG |
| BSC105N10LSFGXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC105N10LSFGATMA1 vs BSC105N10LSFGXT |
BSC105N10LSFGATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for BSC105N10LSFGATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for BSC105N10LSFGATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, BSC105N10LSFGATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.