Part Details for BSC011N03LSATMA1 by Infineon Technologies AG
Results Overview of BSC011N03LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC011N03LSATMA1 Information
BSC011N03LSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC011N03LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47Y7992
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Newark | Mosfet, N-Ch, 30V, 230A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:230A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC011N03LSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 7550 |
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$0.6320 | Buy Now |
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DISTI #
BSC011N03LSATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 37A/100A TDSON Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
31485 In Stock |
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$0.5704 / $1.6300 | Buy Now |
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DISTI #
47Y7992
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Avnet Americas | Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 47Y7992) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 642 Partner Stock |
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$0.7510 / $1.1300 | Buy Now |
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DISTI #
BSC011N03LSATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC011N03LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.4220 / $0.4514 | Buy Now |
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DISTI #
BSC011N03LSATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC011N03LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.4512 / $0.4606 | Buy Now |
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DISTI #
726-BSC011N03LSATMA1
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Mouser Electronics | MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS RoHS: Compliant | 27775 |
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$0.5820 / $1.5200 | Buy Now |
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DISTI #
V72:2272_06383624
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Arrow Electronics | Trans MOSFET N-CH 30V 39A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2220 Container: Cut Strips | Americas - 453 |
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$0.5159 / $0.8535 | Buy Now |
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DISTI #
30614767
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Verical | Trans MOSFET N-CH 30V 39A 8-Pin TDSON EP T/R Min Qty: 43 Package Multiple: 1 | Americas - 9785 |
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$0.5780 / $0.8050 | Buy Now |
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DISTI #
85964911
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Verical | Trans MOSFET N-CH 30V 39A 8-Pin TDSON EP T/R Min Qty: 402 Package Multiple: 1 Date Code: 2201 | Americas - 5000 |
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$0.9346 | Buy Now |
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DISTI #
85971904
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Verical | Trans MOSFET N-CH 30V 39A 8-Pin TDSON EP T/R Min Qty: 402 Package Multiple: 1 Date Code: 1901 | Americas - 3338 |
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$0.9346 | Buy Now |
Part Details for BSC011N03LSATMA1
BSC011N03LSATMA1 CAD Models
BSC011N03LSATMA1 Part Data Attributes
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BSC011N03LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC011N03LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC011N03LSATMA1
This table gives cross-reference parts and alternative options found for BSC011N03LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC011N03LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC011N03LSIATMA1 | Infineon Technologies AG | $1.0663 | Power Field-Effect Transistor, 37A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC011N03LSATMA1 vs BSC011N03LSIATMA1 |
| BSC011N03LSI | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC011N03LSATMA1 vs BSC011N03LSI |
BSC011N03LSATMA1 Frequently Asked Questions (FAQ)
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Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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The BSC011N03LSATMA1 requires a gate-source voltage (Vgs) of 5-10V for optimal performance. Ensure the gate driver is capable of providing this voltage range.
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The maximum allowed power dissipation for the BSC011N03LSATMA1 is 150W. Ensure the device is properly cooled and the PCB is designed to handle the maximum power dissipation.
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Yes, the BSC011N03LSATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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Handle the device with ESD-protective equipment and follow proper ESD-handling procedures to prevent damage. The device has an ESD rating of 2kV human body model (HBM) and 150V machine model (MM).