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Part Details for BSC011N03LS by Infineon Technologies AG
Results Overview of BSC011N03LS by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC011N03LS Information
BSC011N03LS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC011N03LS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-BSC011N03LS
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Mouser Electronics | MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS RoHS: Compliant | 36941 |
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$0.5780 / $1.5700 | Buy Now |
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DISTI #
69752300
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Verical | Trans MOSFET N-CH 30V 39A 8-Pin TDSON EP T/R Min Qty: 51 Package Multiple: 1 Date Code: 2201 | Americas - 9300 |
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$1.3692 / $1.6957 | Buy Now |
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Win Source Electronics | MOSFET N-CH 30V 100A 8TDSON | 46116 |
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$0.5283 / $0.7923 | Buy Now |
Part Details for BSC011N03LS
BSC011N03LS CAD Models
BSC011N03LS Part Data Attributes
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BSC011N03LS
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC011N03LS
Infineon Technologies AG
Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 204 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 220 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 920 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC011N03LS
This table gives cross-reference parts and alternative options found for BSC011N03LS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC011N03LS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC011N03LSATMA1 | Infineon Technologies AG | $0.7155 | Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC011N03LS vs BSC011N03LSATMA1 |
| BSC011N03LSIATMA1 | Infineon Technologies AG | $1.0663 | Power Field-Effect Transistor, 37A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC011N03LS vs BSC011N03LSIATMA1 |
| BSC011N03LSI | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC011N03LS vs BSC011N03LSI |
BSC011N03LS Frequently Asked Questions (FAQ)
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The maximum operating frequency of BSC011N03LS is 100 kHz.
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BSC011N03LS is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
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The maximum power dissipation of BSC011N03LS is 1.4 W at a case temperature of 25°C.
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No, BSC011N03LS is not suitable for high-frequency switching applications due to its relatively high gate charge and internal gate resistance.
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Yes, BSC011N03LS is qualified for automotive applications and meets the requirements of AEC-Q101.