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Part Details for BSC010N04LSIATMA1 by Infineon Technologies AG
Results Overview of BSC010N04LSIATMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC010N04LSIATMA1 Information
BSC010N04LSIATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC010N04LSIATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8324
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Newark | Mosfet, N-Ch, 40V, 100A, 150Deg C, 139W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC010N04LSIATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 898 |
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$1.2000 | Buy Now |
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DISTI #
86AK4418
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Newark | Mosfet, N-Ch, 40V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC010N04LSIATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.6500 | Buy Now |
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DISTI #
BSC010N04LSIATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 37A/100A TDSON Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
7398 In Stock |
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$1.1172 / $1.2200 | Buy Now |
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DISTI #
13AC8324
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Avnet Americas | Power MOSFET, N Channel, 40 V, 100 A, 900 ?ohm, TDSON, Surface Mount - Product that comes on tape, but is not reeled (Alt: 13AC8324) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 898 Partner Stock |
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$2.0900 / $3.1200 | Buy Now |
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DISTI #
BSC010N04LSIATMA1
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Avnet Americas | Power MOSFET, N Channel, 40 V, 100 A, 900 ?ohm, TDSON, Surface Mount - Tape and Reel (Alt: BSC010N04LSIATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.7910 / $0.8075 | Buy Now |
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DISTI #
726-BSC010N04LSIATMA
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Mouser Electronics | MOSFETs N-Ch 40V 100A TDSON-8 FL OptiMOS RoHS: Compliant | 2938 |
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$1.0500 / $1.2600 | Buy Now |
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DISTI #
V72:2272_06378523
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Arrow Electronics | Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2243 Container: Cut Strips | Americas - 6032 |
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$1.0212 / $1.1601 | Buy Now |
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DISTI #
69265483
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Verical | Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R Min Qty: 21 Package Multiple: 1 Date Code: 2323 | Americas - 9906 |
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$1.2400 / $1.3700 | Buy Now |
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DISTI #
80316365
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Verical | Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R Min Qty: 42 Package Multiple: 1 | Americas - 898 |
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$1.5853 / $1.8086 | Buy Now |
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Bristol Electronics | 441 |
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RFQ |
Part Details for BSC010N04LSIATMA1
BSC010N04LSIATMA1 CAD Models
BSC010N04LSIATMA1 Part Data Attributes
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BSC010N04LSIATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC010N04LSIATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8, 8 PIN | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC010N04LSIATMA1
This table gives cross-reference parts and alternative options found for BSC010N04LSIATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC010N04LSIATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD18510Q5BT | Texas Instruments | $2.9836 | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150 | BSC010N04LSIATMA1 vs CSD18510Q5BT |
| BSC010N04LSI | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | BSC010N04LSIATMA1 vs BSC010N04LSI |
| BSC010N04LSTATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSC010N04LSIATMA1 vs BSC010N04LSTATMA1 |
| BSB014N04LX3GXUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 | BSC010N04LSIATMA1 vs BSB014N04LX3GXUMA1 |
BSC010N04LSIATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for BSC010N04LSIATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for BSC010N04LSIATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, BSC010N04LSIATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.