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Part Details for BSC010N04LS6ATMA1 by Infineon Technologies AG
Results Overview of BSC010N04LS6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSC010N04LS6ATMA1 Information
BSC010N04LS6ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC010N04LS6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AH1040
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Newark | Mosfet, N-Ch, 40V, 100A, 175Deg C, 150W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon BSC010N04LS6ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3548 |
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$0.9040 / $1.0700 | Buy Now |
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DISTI #
86AK4419
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Newark | Mosfet, N-Ch, 40V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC010N04LS6ATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.9450 | Buy Now |
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DISTI #
BSC010N04LS6ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 40A/100A TDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9468 In Stock |
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$0.8252 / $2.2100 | Buy Now |
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DISTI #
02AH1040
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Avnet Americas | Power MOSFET, N Channel, 40 V, 100 A, 890 ?ohm, TDSON, Surface Mount - Product that comes on tape, but is not reeled (Alt: 02AH1040) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 3548 Partner Stock |
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$1.2400 / $2.4000 | Buy Now |
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DISTI #
BSC010N04LS6ATMA1
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Avnet Americas | Power MOSFET, N Channel, 40 V, 100 A, 890 ?ohm, TDSON, Surface Mount - Tape and Reel (Alt: BSC010N04LS6ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.6730 / $0.7200 | Buy Now |
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DISTI #
726-BSC010N04LS6ATMA
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Mouser Electronics | MOSFETs TRENCH <= 40V RoHS: Compliant | 15583 |
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$0.8420 / $2.1700 | Buy Now |
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DISTI #
V36:1790_22937529
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Arrow Electronics | Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Date Code: 2407 | Americas - 10000 |
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$0.7010 | Buy Now |
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Future Electronics | 40V 285A 1 mOhm N-ch SuperSO8 5x6 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 5000Reel |
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$0.7950 | Buy Now |
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DISTI #
77838984
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Verical | Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2407 | Americas - 10000 |
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$0.7075 | Buy Now |
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DISTI #
62294600
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Verical | Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R Min Qty: 28 Package Multiple: 1 Date Code: 2224 | Americas - 9743 |
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$0.8150 / $1.6500 | Buy Now |
Part Details for BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 CAD Models
BSC010N04LS6ATMA1 Part Data Attributes
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BSC010N04LS6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC010N04LS6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 241A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Reach Compliance Code | not_compliant | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 376 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 241 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 66 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 1140 A | |
| Reference Standard | IEC-61249-2-21; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
BSC010N04LS6ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSC010N04LS6ATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate drive voltage for the BSC010N04LS6ATMA1 is 15V, with a maximum voltage of 20V.
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Yes, the BSC010N04LS6ATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment is grounded.