Part Details for BSB017N03LX3G by Infineon Technologies AG
Results Overview of BSB017N03LX3G by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
BSB017N03LX3G Information
BSB017N03LX3G by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSB017N03LX3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 650 |
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RFQ |
Part Details for BSB017N03LX3G
BSB017N03LX3G CAD Models
BSB017N03LX3G Part Data Attributes
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BSB017N03LX3G
Infineon Technologies AG
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Datasheet
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BSB017N03LX3G
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-MBCC-N3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 225 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 147 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSB017N03LX3G
This table gives cross-reference parts and alternative options found for BSB017N03LX3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSB017N03LX3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSB014N04LX3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 | BSB017N03LX3G vs BSB014N04LX3G |
BSB017N03LX3G Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the BSB017N03LX3G is a 3.3mm x 3.3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
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Proper cooling is crucial for the BSB017N03LX3G. Ensure good thermal conductivity by using a thermal pad or thermal interface material (TIM) between the device and the heat sink. The datasheet provides thermal resistance and power dissipation guidelines.
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The maximum allowed voltage for the BSB017N03LX3G is 30V. Exceeding this voltage may damage the device. The datasheet provides detailed voltage rating information.
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To protect the BSB017N03LX3G from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind. The datasheet provides ESD classification and handling guidelines.
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The typical turn-on and turn-off time for the BSB017N03LX3G is around 10-20ns. However, this can vary depending on the specific application and operating conditions. The datasheet provides detailed switching characteristic information.