Part Details for BR24G02FV-3GTE2 by ROHM Semiconductor
Results Overview of BR24G02FV-3GTE2 by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BR24G02FV-3GTE2 Information
BR24G02FV-3GTE2 by ROHM Semiconductor is an EEPROM.
EEPROMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for BR24G02FV-3GTE2
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
BR24G02FV-3GTE2CT-ND
|
DigiKey | IC EEPROM 2KBIT I2C 8SSOPB Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5265 In Stock |
|
$0.1178 / $0.1600 | Buy Now |
DISTI #
755-BR24G02FV-3GTE2
|
Mouser Electronics | EEPROM I2C BUS(2-Wre) 2K SSOP-B8 EEPROM RoHS: Compliant | 4140 |
|
$0.1200 / $0.1700 | Buy Now |
DISTI #
62327339
|
Verical | EEPROM Serial-2Wire 2K-bit 256 x 8 1.8V/2.5V/3.3V/5V 8-Pin SSOP-B T/R RoHS: Compliant Min Qty: 421 Package Multiple: 1 Date Code: 2201 | Americas - 2500 |
|
$0.1688 / $0.1865 | Buy Now |
DISTI #
61697215
|
Verical | EEPROM Serial-2Wire 2K-bit 256 x 8 1.8V/2.5V/3.3V/5V 8-Pin SSOP-B T/R RoHS: Compliant Min Qty: 421 Package Multiple: 1 Date Code: 2201 | Americas - 2011 |
|
$0.1739 / $0.1865 | Buy Now |
DISTI #
87799950
|
Verical | EEPROM Serial-2Wire 2K-bit 256 x 8 1.8V/2.5V/3.3V/5V 8-Pin SSOP-B T/R RoHS: Compliant Min Qty: 300 Package Multiple: 1 Date Code: 2201 | Americas - 300 |
|
$0.2618 | Buy Now |
|
Quest Components | 3848 |
|
$0.1855 / $0.5300 | Buy Now | |
DISTI #
BR24G02FV-3GTE2
|
Avnet Silica | (Alt: BR24G02FV-3GTE2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for BR24G02FV-3GTE2
BR24G02FV-3GTE2 CAD Models
BR24G02FV-3GTE2 Part Data Attributes
|
BR24G02FV-3GTE2
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
BR24G02FV-3GTE2
ROHM Semiconductor
EEPROM, 256X8, Serial, CMOS, PDSO8, SSOP-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SSOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Additional Feature | SEATED HT-CALCULATED | |
Clock Frequency-Max (fCLK) | 0.4 MHz | |
Data Retention Time-Min | 40 | |
Endurance | 1000000 Write/Erase Cycles | |
I2C Control Byte | 1010DDDR | |
JESD-30 Code | R-PDSO-G8 | |
Length | 4.4 mm | |
Memory Density | 2048 bit | |
Memory IC Type | EEPROM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 8 | |
Number of Words | 256 words | |
Number of Words Code | 256 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 256X8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LSSOP | |
Package Equivalence Code | SSOP8,.25 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | |
Parallel/Serial | SERIAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Programming Voltage | 2.5 V | |
Seated Height-Max | 1.35 mm | |
Serial Bus Type | I2C | |
Standby Current-Max | 0.000002 A | |
Supply Current-Max | 0.002 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 1.6 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 3 mm | |
Write Cycle Time-Max (tWC) | 5 ms | |
Write Protection | HARDWARE |
BR24G02FV-3GTE2 Frequently Asked Questions (FAQ)
-
ROHM provides a recommended PCB layout in their application note AN1191, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize noise.
-
The BR24G02FV-3GTE2 has an internal POR circuit that resets the device during power-up. To handle this, ensure that the power supply voltage (VCC) rises slowly and monotonically to avoid false resets. A 10uF capacitor between VCC and GND can help filter out noise and ensure a clean power-up sequence.
-
While the datasheet specifies an operating temperature range of -40°C to 85°C, ROHM recommends derating the device's performance at temperatures above 70°C to ensure reliability and prevent thermal damage.
-
To implement write protection, use the WP pin to control access to the memory array. Tie the WP pin to VCC to enable write protection or to GND to disable it. Additionally, consider using a external voltage supervisor or reset IC to ensure that the device is not written to during power-up or power-down sequences.
-
To erase the entire memory array, use the Chip Erase command (0x60h) followed by the Chip Erase Confirm command (0xD0h). Ensure that the device is in the erase mode by checking the RDY/BSY pin, which will be low during the erase operation.