Part Details for BLF647PS,112 by Ampleon
Results Overview of BLF647PS,112 by Ampleon
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
BLF647PS,112 Information
BLF647PS,112 by Ampleon is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BLF647PS,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-11648-5-ND
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DigiKey | RF MOSFET LDMOS 32V LDMOST Min Qty: 1 Lead time: 16 Weeks Container: Tray |
121 In Stock |
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$158.7000 / $189.0900 | Buy Now |
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DISTI #
BLF647PS,112
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Avnet Americas | Transistor RF FET N-CH 65V 10MHz to 1500MHz 5-Pin SOT-1121B Bulk - Rail/Tube (Alt: BLF647PS,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$152.3520 / $161.2395 | Buy Now |
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DISTI #
94-BLF647PS112
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Mouser Electronics | RF MOSFET Transistors BLF647PS/SOT1121/TRAY RoHS: Compliant | 59 |
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$158.7000 | Buy Now |
Part Details for BLF647PS,112
BLF647PS,112 CAD Models
BLF647PS,112 Part Data Attributes
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BLF647PS,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLF647PS,112
Ampleon
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFP-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
BLF647PS,112 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the BLF647PS,112 is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum voltage rating is 65V and the maximum current rating is 12.5A. Operating the device within these limits ensures safe and reliable operation.
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To optimize the thermal performance of the BLF647PS,112, ensure good thermal contact between the device and the heat sink, use a thermal interface material (TIM) with a high thermal conductivity, and maintain a low thermal resistance between the device and the ambient environment. Additionally, consider using a heat sink with a high thermal conductivity and a large surface area to dissipate heat efficiently.
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For optimal performance and to minimize electromagnetic interference (EMI), use a multi-layer PCB with a solid ground plane, and ensure that the device's ground pins are connected to the ground plane. Use short, wide traces for the RF signal paths, and avoid vias and right-angle bends. Also, consider using a common-mode choke or a ferrite bead to filter out high-frequency noise.
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To match the input and output impedances of the BLF647PS,112, use a combination of series and shunt components, such as capacitors, inductors, and resistors. The goal is to achieve a conjugate match, where the input impedance of the device is matched to the output impedance of the preceding stage, and the output impedance of the device is matched to the input impedance of the following stage. Use simulation tools or impedance matching software to determine the optimal component values.
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For optimal performance, follow the recommended biasing and tuning procedures outlined in the datasheet or application notes. Typically, this involves setting the gate voltage and drain voltage to the recommended values, and then adjusting the biasing and tuning components to achieve the desired output power, gain, and efficiency. Use a systematic approach, such as the 'load-pull' method, to optimize the device's performance.