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Part Details for BC847BLT1G by onsemi
Results Overview of BC847BLT1G by onsemi
- Distributor Offerings: (46 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
BC847BLT1G Information
BC847BLT1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BC847BLT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
88H4566
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Newark | Bipolar Transistor, Npn, 45V Sot-23, Transistor Polarity:Npn, Collector Emitter Voltage Max:45V, Continuous Collector Current:100Ma, Power Dissipation:300Mw, Transistor Mounting:Surface Mount, No. Of Pins:3Pins, Msl:Msl 1 - Unlimitedrohs Compliant: Yes |Onsemi BC847BLT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 22819 |
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$0.0140 / $0.0150 | Buy Now |
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DISTI #
94W7538
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Newark | Transistor, Npn, 45V, 100Ma, Sot-23-3, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:45V, Transition Frequency Ft:100Mhz, Power Dissipation Pd:300Mw, Dc Collector Current:100Ma, Dc Current Gain Hfe:200Hfe, Transistor Rohs Compliant: Yes |Onsemi BC847BLT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0200 | Buy Now |
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DISTI #
BC847BLT1GOSCT-ND
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DigiKey | TRANS NPN 45V 0.1A SOT23-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
25270 In Stock |
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$0.0116 / $0.1200 | Buy Now |
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DISTI #
BC847BLT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 45 V, 100 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: BC847BLT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 57000 |
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$0.0101 / $0.0108 | Buy Now |
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DISTI #
88H4566
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Avnet Americas | Single Bipolar Transistor, NPN, 45 V, 100 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 88H4566) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 22919 Partner Stock |
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$0.0280 / $0.1050 | Buy Now |
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DISTI #
BC847BLT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 45 V, 100 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: BC847BLT1G) RoHS: Compliant Min Qty: 90000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
BC847BLT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 45 V, 100 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: BC847BLT1G) RoHS: Compliant Min Qty: 90000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
BC847BLT1G
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Avnet Americas | Single Bipolar Transistor, NPN, 45 V, 100 mA, 225 mW, SOT-23 (TO-236), 3 Pins, Surface Mount - Tape and Reel (Alt: BC847BLT1G) RoHS: Compliant Min Qty: 90000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
863-BC847BLT1G
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Mouser Electronics | Bipolar Transistors - BJT 100mA 50V NPN RoHS: Compliant | 0 |
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$0.0140 / $0.1000 | Order Now |
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DISTI #
V36:1790_07301403
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Arrow Electronics | Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2429 | Americas - 405000 |
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$0.0084 / $0.0165 | Buy Now |
Part Details for BC847BLT1G
BC847BLT1G CAD Models
BC847BLT1G Part Data Attributes
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BC847BLT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
BC847BLT1G
onsemi
NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 3 LEAD | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Collector-Emitter Voltage-Max | 45 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 200 | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.6 V |
Alternate Parts for BC847BLT1G
This table gives cross-reference parts and alternative options found for BC847BLT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BC847BLT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BC847BLT1 | onsemi | Check for Price | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | BC847BLT1G vs BC847BLT1 |
| BC847BLT3G | onsemi | $0.0258 | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | BC847BLT1G vs BC847BLT3G |
| BC847B,235 | Nexperia | Check for Price | vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors@en-us TO-236 3-Pin | BC847BLT1G vs BC847B,235 |
| BC847B-7-F | Diodes Incorporated | $0.0523 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN,PLASTIC PACKAGE-3 | BC847BLT1G vs BC847B-7-F |
| BC847B,215 | Nexperia | $0.0417 | vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors@en-us TO-236 3-Pin | BC847BLT1G vs BC847B,215 |
| BC847BLP-7B | Diodes Incorporated | $0.1371 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN | BC847BLT1G vs BC847BLP-7B |
| BC847BLP-7 | Diodes Incorporated | $0.1266 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN | BC847BLT1G vs BC847BLP-7 |
BC847BLT1G Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BC847BLT1G is -55°C to 150°C.
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To ensure stability, it's recommended to use a resistor-capacitor (RC) network in the emitter leg to prevent oscillations. Additionally, a ferrite bead or a small inductor can be used in series with the base to reduce high-frequency noise.
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The recommended storage temperature for the BC847BLT1G is -40°C to 100°C.
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Yes, the BC847BLT1G can be used as a switch, but it's essential to ensure that the transistor is fully saturated (Vce(sat) < 0.5V) to minimize power dissipation and heat generation.
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To handle ESD protection, it's recommended to use ESD protection devices, such as TVS diodes or ESD arrays, in conjunction with proper PCB design and layout practices to minimize the risk of ESD damage.