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Part Details for AT25DF512C-SSHN-B by Renesas Electronics Corporation
Results Overview of AT25DF512C-SSHN-B by Renesas Electronics Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
AT25DF512C-SSHN-B Information
AT25DF512C-SSHN-B by Renesas Electronics Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for AT25DF512C-SSHN-B
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
67AC3291
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Newark | Flash Memory, 512Kbit, -40 To 85Deg C, Flash Memory Type:Serial Nor, Memory Configuration:-, Interfaces:Spi, Ic Case/Package:Wsoic, No. Of Pins:8Pins, Clock Frequency Max:104Mhz, Access Time:-, Supply Voltage Min:1.65V, Msl:- Rohs Compliant: Yes |Renesas AT25DF512C-SSHN-B RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 162 |
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$0.2120 | Buy Now |
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DISTI #
1265-1179-5-ND
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DigiKey | IC FLASH 512KBIT SPI 8SOIC Min Qty: 1 Lead time: 18 Weeks Container: Tube |
7702 In Stock |
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$0.3840 / $0.5000 | Buy Now |
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DISTI #
AT25DF512C-SSHN-B
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Avnet Americas | Flash Memory serial - Rail/Tube (Alt: AT25DF512C-SSHN-B) RoHS: Not Compliant Min Qty: 7840 Package Multiple: 98 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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$0.4800 | Buy Now |
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DISTI #
988-AT25DF512CSSHN-B
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Mouser Electronics | NOR Flash 512 Kbit, Wide Vcc (1.7V to 3.6V), -40C to 85C, SOIC-N 150mil (Tube), Single, Dual SPI NOR flash RoHS: Compliant | 4902 |
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$0.3720 / $0.4700 | Buy Now |
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Bristol Electronics | 100 |
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RFQ | ||
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DISTI #
AT25DF512C-SSHN-B
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Avnet Silica | Flash Memory serial (Alt: AT25DF512C-SSHN-B) RoHS: Compliant Min Qty: 98 Package Multiple: 98 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | IC FLASH 512KBIT SPI 8SOIC | 2000 |
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RFQ |
Part Details for AT25DF512C-SSHN-B
AT25DF512C-SSHN-B CAD Models
AT25DF512C-SSHN-B Part Data Attributes
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AT25DF512C-SSHN-B
Renesas Electronics Corporation
Buy Now
Datasheet
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AT25DF512C-SSHN-B
Renesas Electronics Corporation
512 Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support, SOIC-N, 98/Tube
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | SOIC-N | |
| Package Description | SOIC-8 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Clock Frequency-Max (fCLK) | 104 MHz | |
| Data Retention Time-Min | 20 | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | R-PDSO-G8 | |
| Length | 4.925 mm | |
| Memory Density | 524288 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Terminals | 8 | |
| Number of Words | 65536 words | |
| Number of Words Code | 64000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64KX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOP | |
| Package Equivalence Code | SOP8,.25 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Parallel/Serial | SERIAL | |
| Programming Voltage | 3 V | |
| Seated Height-Max | 1.75 mm | |
| Serial Bus Type | DSPI | |
| Standby Current-Max | 0.000015 A | |
| Supply Current-Max | 0.018 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Type | NOR TYPE | |
| Width | 3.9 mm | |
| Write Protection | HARDWARE/SOFTWARE |
AT25DF512C-SSHN-B Frequently Asked Questions (FAQ)
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The AT25DF512C-SSHN-B has a maximum of 100,000 erase cycles per sector, and 10,000 erase cycles per device.
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To handle page write buffer underrun errors, ensure that the page write buffer is fully loaded with data before initiating the write operation. Also, use the status register to monitor the write operation and detect any errors.
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The recommended power-up sequence is to apply VCC first, followed by the clock signal (SCK), and then the chip select signal (CS). This ensures proper device initialization and prevents unwanted writes or erases.
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Yes, the AT25DF512C-SSHN-B can be used in a multi-master SPI bus configuration. However, ensure that each master device has its own chip select signal and that the bus is properly arbitrated to prevent data corruption or bus contention.
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To implement secure erase, use the JEDEC-standard erase command sequence, which includes a 3-byte command code (0x20, 0x00, 0x00) followed by the address of the sector to be erased. This ensures that all data in the sector is securely erased.