Part Details for ARF463BP1G by Microchip Technology Inc
Results Overview of ARF463BP1G by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Internet of Things (IoT)
Audio and Video Systems
Computing and Data Storage
Financial Technology (Fintech)
Smart Cities
Telecommunications
Communication and Networking
Automotive
ARF463BP1G Information
ARF463BP1G by Microchip Technology Inc is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for ARF463BP1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6296
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Newark | Rf Mosfet (Vdmos) 500 V 100 W 100 Mhz To-247 Common Source 3 To-247Cs Tube Rohs Compliant: Yes |Microchip ARF463BP1G RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$35.3700 / $45.0300 | Buy Now |
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DISTI #
ARF463BP1G-ND
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DigiKey | RF MOSFET 125V TO247 Min Qty: 1 Lead time: 24 Weeks Container: Tube |
25 In Stock |
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$30.9250 / $45.0300 | Buy Now |
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DISTI #
ARF463BP1G
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Avnet Americas | RF Power MOSFET N-Channel 500V 9A 100MHz 3-Pin TO-247 - Rail/Tube (Alt: ARF463BP1G) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Tube | 0 |
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$28.9458 / $30.9250 | Buy Now |
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DISTI #
494-ARF463BP1G
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Mouser Electronics | RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source RoHS: Compliant | 10 |
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$38.1100 / $45.0300 | Buy Now |
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DISTI #
ARF463BP1G
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Microchip Technology Inc | RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source, TO-247CS, Projected EOL: 2044-04-30 COO: Philippines ECCN: EAR99 RoHS: Compliant Lead time: 24 Weeks, 0 Days Container: Tube |
0 Alternates Available |
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$32.9100 / $45.0300 | Buy Now |
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Onlinecomponents.com | Trans RF MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 0 |
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$33.2100 / $46.3900 | Buy Now |
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NAC | FG, MOSFET, 500V, TO-247, RoHS RoHS: Compliant Min Qty: 10 Package Multiple: 1 Container: Tube | 0 |
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$30.1700 / $35.3400 | Buy Now |
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DISTI #
ARF463BP1G
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 30 | 0 |
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$32.6700 / $33.9800 | Buy Now |
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Cytech Systems Limited | RF MOSFET 125V TO247 | 6 |
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RFQ | |
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Master Electronics | Trans RF MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 0 |
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$33.2100 / $46.3900 | Buy Now |
Part Details for ARF463BP1G
ARF463BP1G CAD Models
ARF463BP1G Part Data Attributes
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ARF463BP1G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
ARF463BP1G
Microchip Technology Inc
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 9 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for ARF463BP1G
This table gives cross-reference parts and alternative options found for ARF463BP1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ARF463BP1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ARF463AG | Microchip Technology Inc | $40.7945 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 | ARF463BP1G vs ARF463AG |
| ARF463BG | Microchip Technology Inc | $40.7945 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 | ARF463BP1G vs ARF463BG |
| ARF449AG | Microchip Technology Inc | $42.9269 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 | ARF463BP1G vs ARF449AG |
| ARF463BP1 | Microsemi Corporation | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | ARF463BP1G vs ARF463BP1 |
| ARF449A | Microchip Technology Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 | ARF463BP1G vs ARF449A |
| ARF463BP1G | Microsemi Corporation | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | ARF463BP1G vs ARF463BP1G |
| ARF463AP1G | Microsemi Corporation | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | ARF463BP1G vs ARF463AP1G |
ARF463BP1G Frequently Asked Questions (FAQ)
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Microchip provides a recommended PCB layout in the ARF463BP1G evaluation board user's guide, which includes guidelines for component placement, routing, and grounding to minimize noise and ensure optimal performance.
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The ARF463BP1G is a highly configurable device, and frequency band selection is done through the SPI interface. Refer to the device's programming guide and the Microchip LoRaWAN stack documentation for specific configuration details.
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The maximum transmit power of the ARF463BP1G is +20 dBm. The transmit power can be adjusted through the SPI interface by setting the appropriate registers. Refer to the device's datasheet and programming guide for more information.
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The ARF463BP1G supports antenna diversity, which can be implemented using external switches and antennas. Microchip provides an application note on antenna diversity implementation, which includes schematics and design guidelines.
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The power consumption of the ARF463BP1G varies depending on the mode of operation. Refer to the device's datasheet for specific power consumption values in transmit, receive, and sleep modes.