Part Details for APT8014JLL by Microchip Technology Inc
Results Overview of APT8014JLL by Microchip Technology Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
APT8014JLL Information
APT8014JLL by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT8014JLL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6239
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Newark | Mosfet Mos7 800 V 14 Ohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT8014JLL RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$46.0400 / $56.7000 | Buy Now |
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DISTI #
APT8014JLL
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Avnet Americas | Trans MOSFET N-CH 800V 42A 4-Pin SOT-227 - Rail/Tube (Alt: APT8014JLL) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$43.0794 / $47.4810 | Buy Now |
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DISTI #
494-APT8014JLL
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Mouser Electronics | MOSFETs MOSFET MOS7 800 V 14 Ohm SOT-227 RoHS: Compliant | 0 |
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$48.9700 / $56.7000 | Order Now |
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DISTI #
VBF:5286_14075782
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Arrow Electronics | Trans MOSFET N-CH 800V 42A 4-Pin SOT-227 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2132 | Americas - 75 |
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$47.6900 / $56.4700 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH 800V 42A 4-Pin SOT-227 Tube RoHS: Compliant | 0 |
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$44.1000 / $54.1500 | Buy Now |
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DISTI #
APT8014JLL
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TME | Module, single transistor, 800V, 42A, ISOTOP, screw, Idm: 168A, 595W Min Qty: 1 | 0 |
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$65.1900 / $81.9700 | RFQ |
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NAC | FG, MOSFET, 800V, 0.14_OHM, SOT-227 RoHS: Compliant Min Qty: 6 Package Multiple: 1 Container: Tube | 0 |
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$44.9000 / $52.6000 | Buy Now |
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DISTI #
APT8014JLL
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 10 | 0 |
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$48.6300 / $50.5600 | Buy Now |
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Master Electronics | Trans MOSFET N-CH 800V 42A 4-Pin SOT-227 Tube RoHS: Compliant | 0 |
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$44.1000 / $54.1500 | Buy Now |
Part Details for APT8014JLL
APT8014JLL CAD Models
APT8014JLL Part Data Attributes
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APT8014JLL
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT8014JLL
Microchip Technology Inc
Power Field-Effect Transistor, 42A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Avalanche Energy Rating (Eas) | 3200 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 595 W | |
| Pulsed Drain Current-Max (IDM) | 168 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT8014JLL
This table gives cross-reference parts and alternative options found for APT8014JLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT8014JLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXKN45N80C | IXYS Corporation | $26.9390 | Power Field-Effect Transistor, 44A I(D), 800V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXKN45N80C |
| APT8020JFLL | Microchip Technology Inc | $42.9640 | Power Field-Effect Transistor, 40A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8020JFLL |
| APT8024JFLL | Microchip Technology Inc | $47.5913 | Power Field-Effect Transistor, 29A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8024JFLL |
| APT8014JFLL | Microchip Technology Inc | $64.1258 | Power Field-Effect Transistor, 42A I(D), 800V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | APT8014JLL vs APT8014JFLL |
| IXFN50N80Q2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXFN50N80Q2 |
| IXKN45N80C | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 44A I(D), 800V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXKN45N80C |
| APT8015JVFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 44A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT8014JLL vs APT8015JVFR |
| IXFL60N80P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 40A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN | APT8014JLL vs IXFL60N80P |
| IXFN50N80Q2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | APT8014JLL vs IXFN50N80Q2 |
| APT8020JFLL | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 40A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | APT8014JLL vs APT8020JFLL |
APT8014JLL Frequently Asked Questions (FAQ)
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Microchip recommends a 2-layer or 4-layer PCB with a solid ground plane on the bottom layer to improve thermal performance. Additionally, placing thermal vias under the package can help to dissipate heat more efficiently.
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To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the temperature derating curve provided in the datasheet.
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Although the datasheet specifies a maximum input voltage of 5.5V, it's recommended to limit the voltage on the VIN pin to 5V to ensure reliable operation and prevent damage to the device.
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To configure the APT8014JLL for low-power mode, set the EN pin low, and ensure that the VIN pin is below the undervoltage lockout (UVLO) threshold. This will reduce the quiescent current and power consumption.
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Microchip recommends using a 10uF to 22uF ceramic capacitor with an X5R or X7R dielectric type for the VIN pin to ensure stable operation and minimize input voltage ripple.