Part Details for APT20M22JVRU2 by Microsemi Corporation
Results Overview of APT20M22JVRU2 by Microsemi Corporation
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APT20M22JVRU2 Information
APT20M22JVRU2 by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT20M22JVRU2
APT20M22JVRU2 CAD Models
APT20M22JVRU2 Part Data Attributes
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APT20M22JVRU2
Microsemi Corporation
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Datasheet
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APT20M22JVRU2
Microsemi Corporation
Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | ISOTOP | |
| Package Description | ROHS COMPLIANT, ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 97 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 450 W | |
| Pulsed Drain Current-Max (IDM) | 388 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
APT20M22JVRU2 Frequently Asked Questions (FAQ)
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Microsemi recommends following the PCB layout guidelines in the application note AN-1071, which includes thermal management considerations such as heat sink attachment and thermal vias to ensure optimal performance and reliability.
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To ensure EMC, follow the guidelines in the Microsemi application note AN-1069, which provides recommendations for PCB layout, component selection, and shielding to minimize electromagnetic interference (EMI) and ensure compliance with regulatory standards.
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Microsemi recommends following the soldering and assembly guidelines in the application note AN-1070, which includes information on soldering temperatures, times, and techniques to ensure reliable assembly and minimize defects.
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Microsemi provides a troubleshooting guide in the application note AN-1072, which includes a fault diagnosis flowchart and recommended procedures for identifying and resolving common issues with the APT20M22JVRU2.
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The APT20M22JVRU2 is qualified for operation in a variety of environmental and operating conditions, including temperature ranges from -40°C to 125°C, humidity up to 95%, and vibration up to 10G. Refer to the datasheet and application notes for specific details.