Part Details for APT20M22JVR by Microsemi Corporation
Results Overview of APT20M22JVR by Microsemi Corporation
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- Part Data Attributes: (Available)
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Applications
Industrial Automation
Electronic Manufacturing
APT20M22JVR Information
APT20M22JVR by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT20M22JVR
APT20M22JVR CAD Models
APT20M22JVR Part Data Attributes
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APT20M22JVR
Microsemi Corporation
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Datasheet
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APT20M22JVR
Microsemi Corporation
Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | ISOTOP | |
| Package Description | ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 97 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 388 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
APT20M22JVR Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the APT20M22JVR is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can operate at a wider temperature range, but with reduced performance and reliability.
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To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Typically, this includes setting the VCC pin to 3.3V or 5V, and the VEE pin to -5V or -3.3V, depending on the specific application requirements.
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The maximum allowable power dissipation for the APT20M22JVR is typically around 1.5W, but this can vary depending on the specific package and operating conditions. It's essential to calculate the power dissipation based on the device's voltage and current ratings to ensure reliable operation.
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To prevent electrostatic discharge (ESD) damage, handle the APT20M22JVR with care, using anti-static wrist straps, mats, and packaging materials. Ensure that the device is properly grounded during handling and assembly, and follow proper ESD protection procedures during PCB assembly and testing.
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For optimal performance and reliability, follow the recommended PCB layout and design guidelines outlined in the datasheet and application notes. This includes using a solid ground plane, minimizing trace lengths and widths, and ensuring proper decoupling and bypassing of power supplies.