Part Details for APT13003HZTR-G1 by Diodes-BCD
Results Overview of APT13003HZTR-G1 by Diodes-BCD
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Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
Renewable Energy
APT13003HZTR-G1 Information
APT13003HZTR-G1 by Diodes-BCD is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT13003HZTR-G1
APT13003HZTR-G1 CAD Models
APT13003HZTR-G1 Part Data Attributes
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APT13003HZTR-G1
Diodes-BCD
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Datasheet
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APT13003HZTR-G1
Diodes-BCD
Power Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | BCD SEMICONDUCTOR MANUFACTURING LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Collector Current-Max (IC) | 1.5 A | |
| Collector-Emitter Voltage-Max | 465 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 5 | |
| Fall Time-Max (tf) | 400 ns | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.1 W | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz | |
| Turn-off Time-Max (toff) | 3400 ns | |
| Turn-on Time-Max (ton) | 1000 ns | |
| VCEsat-Max | 0.4 V |