Part Details for AOTF5B65M1 by Alpha & Omega Semiconductor
Results Overview of AOTF5B65M1 by Alpha & Omega Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AOTF5B65M1 Information
AOTF5B65M1 by Alpha & Omega Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOTF5B65M1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1773-ND
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DigiKey | IGBT 650V 10A TO-220 Min Qty: 1000 Lead time: 22 Weeks Container: Tube | Temporarily Out of Stock |
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$0.6174 | Buy Now |
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DISTI #
AOTF5B65M1
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TME | Transistor: IGBT, 650V, 5A, 10W, TO220F, Eoff: 0.12mJ, Eon: 0.09mJ Min Qty: 1 | 355 |
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$0.4400 / $0.7180 | Buy Now |
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ComSIT USA | 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode Insulated Gate Bipolar Transistor, 10A I(C), 650V V(BR)CES, N-Channel, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Sense Electronic Company Limited | TO-220 | 1225 |
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RFQ |
Part Details for AOTF5B65M1
AOTF5B65M1 CAD Models
AOTF5B65M1 Part Data Attributes
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AOTF5B65M1
Alpha & Omega Semiconductor
Buy Now
Datasheet
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AOTF5B65M1
Alpha & Omega Semiconductor
IGBT 650V 5A TO220
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | TO-220F, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 157 ns | |
| Turn-on Time-Nom (ton) | 21 ns | |
| VCEsat-Max | 1.98 V |
AOTF5B65M1 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the AOTF5B65M1 is 175°C. Exceeding this temperature can lead to device failure or reduced lifespan.
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To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings in the datasheet. Additionally, use a suitable gate driver and ensure the PCB layout is optimized for high-frequency operation.
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For optimal thermal performance, use a multi-layer PCB with a solid ground plane and thermal vias. Ensure good thermal conductivity between the device and the heat sink. Follow the recommended land pattern and keep the drain and source pins as close as possible to minimize parasitic inductance.
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Yes, the AOTF5B65M1 is suitable for high-frequency switching applications. However, ensure that the gate driver is capable of providing a fast rise and fall time, and that the PCB layout is optimized to minimize parasitic inductance and capacitance.
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Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use ESD protection devices, such as TVS diodes or ESD protection arrays, on the PCB to protect the device from ESD events.