Datasheets
AOTF5B60D by: Alpha & Omega Semiconductor

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel

Part Details for AOTF5B60D by Alpha & Omega Semiconductor

Results Overview of AOTF5B60D by Alpha & Omega Semiconductor

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AOTF5B60D Information

AOTF5B60D by Alpha & Omega Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AOTF5B60D

Part # Distributor Description Stock Price Buy
DISTI # AOTF5B60D-ND
DigiKey IGBT 600V 14A TO-220F Min Qty: 1000 Lead time: 22 Weeks Container: Tube Limited Supply - Call
  • 1,000 $0.6685
$0.6685 Buy Now
DISTI # AOTF5B60D
TME Transistor: IGBT, 600V, 5A, 12.5W, TO220F, Eoff: 0.04mJ, Eon: 0.14mJ Min Qty: 1 224
  • 1 $0.5200
  • 5 $0.4840
  • 25 $0.4820
$0.4820 / $0.5200 Buy Now
ComSIT USA 600V, 5A ALPHA IGBT WITH DIODE Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel ECCN: EAR99 RoHS: Compliant Stock DE - 1000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Sense Electronic Company Limited TO-220F 2694
RFQ

Part Details for AOTF5B60D

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AOTF5B60D Part Data Attributes

AOTF5B60D Alpha & Omega Semiconductor
Buy Now Datasheet
Compare Parts:
AOTF5B60D Alpha & Omega Semiconductor Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31.2 W
Surface Mount NO

AOTF5B60D Related Parts

AOTF5B60D Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) for the AOTF5B60D is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the top of the device using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.

  • The recommended gate drive voltage for the AOTF5B60D is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations. A lower gate drive voltage can reduce gate charge, but may also increase switching losses.

  • To prevent shoot-through in the AOTF5B60D, ensure that the gate drive signals are properly synchronized and have a sufficient dead-time (typically 100ns to 500ns) between the turn-off of one switch and the turn-on of the other switch. Additionally, use a gate drive circuit with a high impedance during the dead-time to prevent unintended turn-on.

  • For optimal performance and to minimize electromagnetic interference (EMI), follow these PCB layout guidelines: keep the power loops small, use a solid ground plane, and place the gate drive components close to the device. Additionally, use a Kelvin connection for the source pin to reduce parasitic inductance.

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