Part Details for AOTF5B60D by Alpha & Omega Semiconductor
Results Overview of AOTF5B60D by Alpha & Omega Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AOTF5B60D Information
AOTF5B60D by Alpha & Omega Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOTF5B60D
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
AOTF5B60D-ND
|
DigiKey | IGBT 600V 14A TO-220F Min Qty: 1000 Lead time: 22 Weeks Container: Tube | Limited Supply - Call |
|
$0.6685 | Buy Now |
DISTI #
AOTF5B60D
|
TME | Transistor: IGBT, 600V, 5A, 12.5W, TO220F, Eoff: 0.04mJ, Eon: 0.14mJ Min Qty: 1 | 224 |
|
$0.4820 / $0.5200 | Buy Now |
|
ComSIT USA | 600V, 5A ALPHA IGBT WITH DIODE Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
Sense Electronic Company Limited | TO-220F | 2694 |
|
RFQ |
Part Details for AOTF5B60D
AOTF5B60D CAD Models
AOTF5B60D Part Data Attributes
|
AOTF5B60D
Alpha & Omega Semiconductor
Buy Now
Datasheet
|
Compare Parts:
AOTF5B60D
Alpha & Omega Semiconductor
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 600 V | |
Gate-Emitter Voltage-Max | 20 V | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 31.2 W | |
Surface Mount | NO |
AOTF5B60D Frequently Asked Questions (FAQ)
-
The maximum junction temperature (Tj) for the AOTF5B60D is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
-
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the top of the device using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
-
The recommended gate drive voltage for the AOTF5B60D is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations. A lower gate drive voltage can reduce gate charge, but may also increase switching losses.
-
To prevent shoot-through in the AOTF5B60D, ensure that the gate drive signals are properly synchronized and have a sufficient dead-time (typically 100ns to 500ns) between the turn-off of one switch and the turn-on of the other switch. Additionally, use a gate drive circuit with a high impedance during the dead-time to prevent unintended turn-on.
-
For optimal performance and to minimize electromagnetic interference (EMI), follow these PCB layout guidelines: keep the power loops small, use a solid ground plane, and place the gate drive components close to the device. Additionally, use a Kelvin connection for the source pin to reduce parasitic inductance.