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Part Details for AOT12N40L by Alpha & Omega Semiconductor
Results Overview of AOT12N40L by Alpha & Omega Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AOT12N40L Information
AOT12N40L by Alpha & Omega Semiconductor is an Other Transistor.
Other Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOT12N40L
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
AOT12N40L-ND
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DigiKey | MOSFET N-CH 400V 11A TO220 Min Qty: 1000 Lead time: 18 Weeks Container: Tube | Limited Supply - Call |
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$0.5673 | Buy Now |
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DISTI #
AOT12N40L
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TME | Transistor: N-MOSFET, unipolar, 400V, 7A, 184W, TO220 Min Qty: 1 | 418 |
|
$0.5930 / $0.8900 | Buy Now |
Part Details for AOT12N40L
AOT12N40L CAD Models
AOT12N40L Part Data Attributes
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AOT12N40L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOT12N40L
Alpha & Omega Semiconductor
Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 368 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.59 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 9 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 184 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |