Part Details for AOD5B65M1 by Alpha & Omega Semiconductor
Results Overview of AOD5B65M1 by Alpha & Omega Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
AOD5B65M1 Information
AOD5B65M1 by Alpha & Omega Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOD5B65M1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1737-1-ND
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DigiKey | IGBT 650V 10A TO-252 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2208 In Stock |
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$0.4425 / $1.7700 | Buy Now |
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DISTI #
AOD5B65M1
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TME | Transistor: IGBT, 650V, 5A, 28W, TO252, Eoff: 0.07mJ, Eon: 0.08mJ Min Qty: 1 | 0 |
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$0.5970 / $1.0210 | RFQ |
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Sense Electronic Company Limited | TO-252-2(DPAK) | 2551 |
|
RFQ |
Part Details for AOD5B65M1
AOD5B65M1 CAD Models
AOD5B65M1 Part Data Attributes
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AOD5B65M1
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOD5B65M1
Alpha & Omega Semiconductor
Insulated Gate Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 10 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 157 ns | |
| Turn-on Time-Nom (ton) | 21 ns | |
| VCEsat-Max | 1.98 V |
AOD5B65M1 Frequently Asked Questions (FAQ)
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The maximum junction temperature of the AOD5B65M1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
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To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range of -2V to 10V, and the drain-source voltage (Vds) is within the recommended range of 0V to 650V.
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For optimal thermal management, it's recommended to use a PCB with a thermal pad and a heat sink. The thermal pad should be connected to a copper plane on the PCB to dissipate heat efficiently. Additionally, ensure that the PCB layout is designed to minimize thermal resistance and maximize heat dissipation.
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To protect the AOD5B65M1 from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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The recommended gate drive circuit for the AOD5B65M1 is a non-inverting gate driver with a voltage swing of 10V to 15V. The gate driver should be capable of sourcing and sinking a current of at least 1A to ensure proper switching.