Part Details for AOBS30B65LN by Alpha & Omega Semiconductor
Results Overview of AOBS30B65LN by Alpha & Omega Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
AOBS30B65LN Information
AOBS30B65LN by Alpha & Omega Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOBS30B65LN
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AOBS30B65LN
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TME | Transistor: IGBT, 650V, 30A, 114W, TO263 Min Qty: 1 | 0 |
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$0.9000 / $1.5100 | RFQ |
Part Details for AOBS30B65LN
AOBS30B65LN CAD Models
AOBS30B65LN Part Data Attributes
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AOBS30B65LN
Alpha & Omega Semiconductor
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Datasheet
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AOBS30B65LN
Alpha & Omega Semiconductor
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2018-08-13 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.4 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 227 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 122 ns | |
| Turn-on Time-Nom (ton) | 52 ns | |
| VCEsat-Max | 2.35 V |