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RF POWER, FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AFT20S015NR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
96W0726
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Newark | Airfast Rf Power Ldmos Transistor, 1805-2690 Mhz 1.5 W Avg., 28 V/ Reel Rohs Compliant: Yes |Nxp AFT20S015NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$14.0500 | Buy Now |
DISTI #
568-15021-1-ND
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DigiKey | RF MOSFET LDMOS 28V TO270-2 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
397 In Stock |
|
$14.7571 / $30.0500 | Buy Now |
DISTI #
AFT20S015NR1
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Avnet Americas | Transistor RF FET N-CH 65V 1805MHz to 2700MHz 2-Pin TO-270 T/R - Tape and Reel (Alt: AFT20S015NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$13.9300 / $14.4025 | Buy Now |
DISTI #
841-AFT20S015NR1
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Mouser Electronics | RF MOSFET Transistors AF 1.8-2.7G 15W TO270-2 RoHS: Compliant | 0 |
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$14.6100 | Order Now |
DISTI #
85967465
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Verical | Trans RF FET N-CH 65V 3-Pin TO-270 T/R Min Qty: 25 Package Multiple: 1 Date Code: 1701 | Americas - 945 |
|
$19.4125 | Buy Now |
DISTI #
85962224
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Verical | Trans RF FET N-CH 65V 3-Pin TO-270 T/R Min Qty: 25 Package Multiple: 1 Date Code: 2101 | Americas - 428 |
|
$19.4125 | Buy Now |
DISTI #
42934807
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Verical | Trans RF FET N-CH 65V 3-Pin TO-270 T/R Min Qty: 4 Package Multiple: 1 Date Code: 1426 | Americas - 4 |
|
$19.1500 | Buy Now |
|
Quest Components | 14 |
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$13.3900 | Buy Now | |
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Rochester Electronics | AFT20S015NR1 - Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V RoHS: Compliant Status: Active Min Qty: 1 | 1373 |
|
$12.4300 / $15.5300 | Buy Now |
DISTI #
AFT20S015NR1
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
$17.2100 / $19.1100 | Buy Now |
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AFT20S015NR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
AFT20S015NR1
NXP Semiconductors
RF POWER, FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | S BAND | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 125 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Time@Peak Reflow Temperature-Max (s) | 40 |
This table gives cross-reference parts and alternative options found for AFT20S015NR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AFT20S015NR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
MRF6S27015NR1 | NXP Semiconductors | Check for Price | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA | AFT20S015NR1 vs MRF6S27015NR1 |
AFT20S015NR1 requires a thermal pad on the bottom of the package. Ensure a solid copper fill on the PCB, and use thermal vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
Implement a robust thermal management system, including heat sinks, thermal interfaces, and airflow. Ensure the device is operated within the specified junction temperature (Tj) range (-40°C to 150°C).
Use a shielded enclosure, and ensure the PCB layout minimizes radiation. Implement proper grounding, and use EMI filters or chokes to reduce emissions. Follow NXP's application notes for EMI and RFI mitigation.
Use the device's built-in power-saving features, such as dynamic voltage and frequency scaling. Implement power gating, and optimize the system's clock frequency and voltage supply. Refer to NXP's power management application notes.
Perform thorough functional testing, including signal integrity and power integrity tests. Validate the device's performance using NXP's recommended test procedures and validation tools.