Part Details for AFT09MS031GNR1 by NXP Semiconductors
Results Overview of AFT09MS031GNR1 by NXP Semiconductors
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AFT09MS031GNR1 Information
AFT09MS031GNR1 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AFT09MS031GNR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05W7251
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Newark | Rf Fet, 40V, 150Deg C, 317W, Drain Source Voltage Vds:40V, Continuous Drain Current Id:-, Power Dissipation:317W, Operating Frequency Min:764Mhz, Operating Frequency Max:941Mhz, No. Of Pins:2Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp AFT09MS031GNR1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1 |
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$3.5700 | Buy Now |
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DISTI #
568-13474-1-ND
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DigiKey | RF MOSFET LDMOS 13.6V TO270-2 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1176 In Stock |
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$12.7010 / $19.5700 | Buy Now |
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DISTI #
05W7251
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Avnet Americas | RF FET Transistor, 40 V, 317 W, 764 MHz, 941 MHz, TO-270 - Bulk (Alt: 05W7251) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 6 Days Container: Bulk | 1 Partner Stock |
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$12.5400 | Buy Now |
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DISTI #
AFT09MS031GNR1
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Avnet Americas | RF FET Transistor, 40 V, 317 W, 764 MHz, 941 MHz, TO-270 - Tape and Reel (Alt: AFT09MS031GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$10.5109 / $12.3549 | Buy Now |
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DISTI #
841-AFT09MS031GNR1
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Mouser Electronics | RF MOSFET Transistors MV9 800MHZ13.6V RoHS: Compliant | 0 |
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$12.7000 / $19.5600 | Order Now |
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DISTI #
AFT09MS031GNR1
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IBS Electronics | AIRFAST WIDEBAND RF POWER LDMOS TRANSISTOR 764-941 MHZ 31 W 13.6 V Min Qty: 500 Package Multiple: 1 | 0 |
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$14.1050 | Buy Now |
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DISTI #
AFT09MS031GNR1
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 500 | 0 |
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$13.1400 | Buy Now |
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DISTI #
AFT09MS031GNR1
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Avnet Silica | RF FET Transistor 40 V 317 W 764 MHz 941 MHz TO270 (Alt: AFT09MS031GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
AFT09MS031GNR1
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EBV Elektronik | RF FET Transistor 40 V 317 W 764 MHz 941 MHz TO270 (Alt: AFT09MS031GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AFT09MS031GNR1
AFT09MS031GNR1 CAD Models
AFT09MS031GNR1 Part Data Attributes
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AFT09MS031GNR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
AFT09MS031GNR1
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 15 Weeks, 6 Days | |
| Samacsys Manufacturer | NXP | |
| Configuration | SINGLE | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 317 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
AFT09MS031GNR1 Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and minimizing thermal resistance by using a large copper area for heat dissipation.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system to keep the junction temperature within the specified range.
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Critical considerations for EMI and RFI shielding include using a metal shield or a Faraday cage, ensuring good grounding, and minimizing signal loop areas to reduce electromagnetic radiation.
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To optimize the device for low-power consumption, use the lowest possible voltage supply, minimize switching frequencies, and use power-saving modes when possible. Additionally, optimize the PCB design to reduce power losses and use low-power external components.
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Recommended testing and validation procedures include functional testing, parametric testing, and environmental testing (e.g., temperature, humidity, and vibration) to ensure the device meets the specified performance and reliability requirements.