Part Details for A5G23H065NT4 by NXP Semiconductors
Results Overview of A5G23H065NT4 by NXP Semiconductors
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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A5G23H065NT4 Information
A5G23H065NT4 by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for A5G23H065NT4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
90AJ5600
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Newark | Airfast Rf Power Gan Amplifier, 2300-2400 Mhz, 8.8 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp A5G23H065NT4 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$17.5300 | Buy Now |
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DISTI #
568-A5G23H065NT4TR-ND
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DigiKey | RF MOSFET GAN 48V 6DFN Min Qty: 2500 Lead time: 18 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$19.3060 | Buy Now |
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DISTI #
A5G23H065NT4
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Avnet Americas | - Tape and Reel (Alt: A5G23H065NT4) Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$17.3742 / $17.9634 | Buy Now |
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DISTI #
771-A5G23H065NT4
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Mouser Electronics | GaN FETs Airfast RF Power GaN Amplifier, 2300-2400 MHz, 8.8 W Avg., 48 V RoHS: Compliant | 0 |
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$18.3100 | Order Now |
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DISTI #
A5G23H065NT4
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$19.2300 | Buy Now |
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Cytech Systems Limited | RF MOSFET GAN 48V 6DFN | 7500 |
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RFQ |
Part Details for A5G23H065NT4
A5G23H065NT4 CAD Models
A5G23H065NT4 Part Data Attributes
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A5G23H065NT4
NXP Semiconductors
Buy Now
Datasheet
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A5G23H065NT4
NXP Semiconductors
RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | DFN-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 18 Weeks | |
| Case Connection | SOURCE | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 125 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PDSO-N6 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 14 dB | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM NITRIDE |